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Scintillation Properties of Ce3+ Doped Silicon-Magnesium-Aluminum-Lithium Glass Scintillators by using Radiation Sources

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Abstract

Glass scintillators can be doped with different elements to improve their luminescence properties. In this study, we present 0.5 wt% Ce3+-doped (58−x)SiO2-4MgO-18Al2O3-20Li2O and (58−x)SiO2- 4MgO-18Al2O3-20LiF glass scintillators. We used a pulsed laser to measure the laser-induced emission spectrum and the decay time with decreasing temperature from 300 K to 10 K. The light intensity of both glass samples increased with decreasing temperature from 300 K to 10 K. Additionally, the two glass samples exhibited a fast decay time of approximately 25 ns. In the photo-induced spectrum, an excitation peak at 312 nm and two emission peaks, at 370 nm and 700 nm, were observed in both the glass samples. The X-ray-induced emission intensity of former is approximately six times higher than that of latter, and only former glass sample exhibits a proton-induced emission spectrum.

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Correspondence to MinJeong Kim.

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Kang, S.C., Kim, H.J., Cho, J.Y. et al. Scintillation Properties of Ce3+ Doped Silicon-Magnesium-Aluminum-Lithium Glass Scintillators by using Radiation Sources. J. Korean Phys. Soc. 73, 1174–1179 (2018). https://doi.org/10.3938/jkps.73.1174

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  • DOI: https://doi.org/10.3938/jkps.73.1174

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