Abstract
We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN (~ 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.
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References
W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda and I. Omura, IEEE Trans. Electron Devices 53, 356 (2006).
S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren, J. Appl. Phys. 86, 1 (1999).
H. Shin et al., J. Korean Phys. Soc. 63, 1621 (2013).
S. Y. Jang, S. W. Moon and J. Park, New Physics: Sae Mulli 65, 1 (2015).
I. H. Lee et al., Curr. Appl. Phys. 16, 628 (2016).
I. H. Lee, Y. H. Kim, Y. I. Chang, J. H. Shin, T. Jang and S. Y. Jang, J. Korean Phys. Soc. 66, 61 (2015).
H. Tokuda, J. Yamazaki and M. Kuzuhara, J. Appl. Phys. 108, 104509 (2010).
M. Azize and T. Palacios, J. Appl. Phys. 108 023707 (2010).
O. Ambacher et al., J. Appl. Phys. 85, 3222 (1999).
Y. S. Yun et al., Curr. Appl. Phys. 16, 1005 (2016).
S. J. Pearton, R. Deist, F. Ren, L. Liu, A. Y. Polyakov and J. Kim, J. Vac. Sci. Technol. A 31 050801 (2013).
A. Y. Polyakov et al., Physica B 376-377, 523 (2006).
A. P. Karmarkar et al., IEEE Trans. Nucl. Sci. 51, 3801 (2004).
H. Xinwen et al., IEEE Trans. Nucl. Sci. 51, 293 (2004).
H-Y. Kim et al., J. Cryst. Growth 326, 62 (2011).
S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou and G. Li, J. Appl. Phys. 91, 3928 (2002).
S. Dhara et al., Appl. Phys. Lett. 82, 451 (2003).
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J. L. Cantin and S. Raymond, IEEE Trans. Nucl. Sci. 49, 2733 (2002).
B. Joo, M. Han, Y. Chang, J. Shin, S. Jang and T. Jang, J. Korean Phys. Soc. 63, 2314 (2013).
J. H. Shin, Y. Je Jo, K-C. Kim, T. Jang and K. S. Kim, Appl. Phys. Lett. 100, 111908 (2012).
H. Okada et al., J. Phys.: Conf. Series 352, 012010 (2012).
A. Abderrahmane, P. J. Ko, H. Okada, S. I. Sato, T. Ohshima and A. Sandhu, IEEE Electron Device Lett. 35, 1130 (2014).
A. Abderrahmane et al., J. Phys.: Conf. Series 433, 012011 (2013).
A. Abderrahmane et al., Appl. Phys. Lett. 102, 193510 (2013).
D. O. Demchenko, I. C. Diallo and M. A. Reshchikov, Phys. Rev. Lett. 110, 087404 (2013).
X. He et al., J. Vac. Sci. Technol. B 32, 051207 (2014).
K. Saarinen et al., Phys. Rev. Lett. 79, 3030 (1997).
J. L. Lyons, A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. 97, 152108 (2010).
M. A. Reshchikov, Appl. Phys. Lett. 88, 202104 (2006).
L. Liu et al., J. Vac. Sci. Technol. B. 32, 022202 (2014).
L. Ling et al., IEEE Trans. Nucl. Sci. 62, 300 (2015).
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Lee, I.H., Lee, C., Choi, B.K. et al. Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices. J. Korean Phys. Soc. 72, 920–924 (2018). https://doi.org/10.3938/jkps.72.920
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DOI: https://doi.org/10.3938/jkps.72.920