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Dependence of the electrical characteristics of a metal-polysilicon-metal photodetector on the morphology of polysilicon

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Abstract

Polysilicon layers acting as an absorption layer in a metal-semiconductor-metal (MSM) photodetector were post-annealed with various annealing processes to find the relationship between the morphology of polysilicon and the photo-response of the MSM photodetector. Among the processes, rapid thermal anneal (RTA) was a suitable post-annealing process because it supplied polysilicon layers having a smoother surface and a proper grain size for photon absorption. Therefore, MSM photodetectors that based on RTA-processed polysilicon showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and that are applicable to sensor systems.

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Authors and Affiliations

  1. Division of Green Energy Engineering, Uiduk University, Gyeongju, 38004, Korea

    Jae-Sung Lee

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  1. Jae-Sung Lee
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Correspondence to Jae-Sung Lee.

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Lee, JS. Dependence of the electrical characteristics of a metal-polysilicon-metal photodetector on the morphology of polysilicon. Journal of the Korean Physical Society 69, 60–64 (2016). https://doi.org/10.3938/jkps.69.60

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  • DOI: https://doi.org/10.3938/jkps.69.60

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