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Silicon space solar cells: progression and radiation-resistance analysis

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Abstract

In this paper, an overview of the solar cell technology based on silicon for applications in space is presented. First, the space environment and its effects on the basis of satellite orbits, such as geostationary earth orbit (GEO) and low earth orbit (LEO), are described. The space solar cell technology based on silicon-based materials, including thin-film silicon solar cells, for use in space was appraised. The evolution of the design for silicon solar cell for use in space, such as a backsurface field (BSF), selective doping, and both-side passivation, etc., is illustrated. This paper also describes the nature of radiation-induced defects and the models proposed for understanding the output power degradation in silicon space solar cells. The phenomenon of an anomalous increase in the short-circuit current (I sc) in the fluence irradiation range from 2 × 1016 cm−2 to 5 × 1016 cm−2 is also described explicitly from the view point of the various presented models.

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Authors and Affiliations

  1. Green Strategic Energy Research Institute, Department of Electronics Engineering, Sejong University, Seoul, 05006, Korea

    Atteq ur Rehman, Sang Hee Lee & Soo Hong Lee

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  1. Atteq ur Rehman
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  2. Sang Hee Lee
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  3. Soo Hong Lee
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Correspondence to Soo Hong Lee.

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Rehman, A.u., Lee, S.H. & Lee, S.H. Silicon space solar cells: progression and radiation-resistance analysis. Journal of the Korean Physical Society 68, 593–598 (2016). https://doi.org/10.3938/jkps.68.593

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