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Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack

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An Erratum to this article was published on 19 November 2015

Abstract

We investigated the effect on the minority carrier lifetime of atomic layer deposition (ALD) Al2O3 passivation by a plasma-enhanced chemical vapor deposition (PECVD) SiON layer in Si/Al2O3/SiON-passivated structure. The lifetime variation of the Al2O3/SiON stack layer was found to depend on both the plasma power and the deposition temperature during the PECVD SiON process and to show better thermal stability than the Al2O3/SiNx:H stack under the same deposition conditions. The lifetime after a high-temperature firing process was improved dramatically at the PECVD deposition temperature of 200 °C. Our results provide a significant clue to reason for the improvement of the passivation performance for passivated emitter and rear contact (PERC) silicon solar cells.

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Authors and Affiliations

  1. Graduate School of Energy Science Technology, Chungnam National University, Daejeon, 305-764, Korea

    Kuk-Hyun Cho, Young Joon Cho & Hyo Sik Chang

  2. Korea Research Institute of Standards and Science, Daejeon, 305-343, Korea

    Kyung-Joong Kim

  3. Photovoltaic Center, Korea Institute of Energy Research, Daejeon, 305-343, Korea

    Hee Eun Song

Authors
  1. Kuk-Hyun Cho
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  2. Young Joon Cho
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  3. Hyo Sik Chang
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  4. Kyung-Joong Kim
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  5. Hee Eun Song
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Correspondence to Hyo Sik Chang.

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Cho, KH., Cho, Y.J., Chang, H.S. et al. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack. Journal of the Korean Physical Society 67, 995–1000 (2015). https://doi.org/10.3938/jkps.67.995

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  • DOI: https://doi.org/10.3938/jkps.67.995

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