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XPS and electron transport study of the paramagnetic dusting effect on MgO-based magnetic tunnel junctions

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Abstract

Amorphous FeZr was dusted in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs), and the effects on tunnel phenomena were investigated. As the thickness of the FeZr layer between the CoFeB and the MgO layers increased, the resistance increased rapidly and the bias dependence became asymmetric while the tunneling magneto-resistance (TMR) decreased. The interface was investigated by using X-ray photoemission spectroscopy, and the change in the transport property due to dusting was explained.

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Authors and Affiliations

  1. Department of Display and Semiconductor Physics, Korea University, Sejong, 339-700, Korea

    Dongseok Kim, Jonghyun Kim, K. Y. Jung, Youngjae Jang & Kungwon Rhie

  2. Department of Physics, Inha University, Incheon, 402-751, Korea

    B. C. Lee

  3. Center for Electricity & Magnetism, Korea Research Institute of Standard and Science, Daejeon, 305-340, Korea

    Sungjung Joo

  4. Department of Physics, Chungbuk National University, Cheongju, 361-763, Korea

    H. J. Kang

  5. Department of Materials Engineering, Chungbuk National University, Cheongju, 361-763, Korea

    Hong-Chol Chae

Authors
  1. Dongseok Kim
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  2. Jonghyun Kim
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  3. K. Y. Jung
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  4. Youngjae Jang
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  5. Kungwon Rhie
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  6. B. C. Lee
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  7. Sungjung Joo
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  8. H. J. Kang
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  9. Hong-Chol Chae
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Correspondence to Kungwon Rhie or Sungjung Joo.

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Kim, D., Kim, J., Jung, K.Y. et al. XPS and electron transport study of the paramagnetic dusting effect on MgO-based magnetic tunnel junctions. Journal of the Korean Physical Society 67, 901–905 (2015). https://doi.org/10.3938/jkps.67.901

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  • DOI: https://doi.org/10.3938/jkps.67.901

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