Abstract
The properties of tellurium-oxide (TeO x ) thin films were investigated for applications in optical devices. The TeO x thin films were deposited by using the radio-frequency (RF) reactive sputtering method with TeO2 composite and Te metallic targets under various sputtering gas ratios. The effect of the Ar:O2 gas ratio on the composition and on the structural and optical properties of the TeO x thin films was evaluated for the two types of targets. The variation of the stoichiometry of the TeO x thin films was observed by using X-ray photoelectron spectroscopy (XPS). The formation of the Te-O bond was confirmed by using Fourier-transform infrared spectroscopy (FTIR). The O:Te atomic ratio of the TeO x thin films was divided into two ranges (1 < x < 2 and 2 < x < 3) for increasing O2 content in the sputtering gas mixture. Different optical properties were observed in the two groups of TeO x thin films. These study results demonstrated that TeO x is a useful material for realizing optical devices based on various O:Te atomic ratios.
Similar content being viewed by others
References
J. Liebertz, Kristall und Technik 4, 221 (1969).
A. Mecseki, I. Foldvari and R. Voszka, Acta Phys. Acad. Sci. Hung. 53, 15 (1982).
I. Abdulhalim, C. N. Pannell, J. Wang, G. Wylangowski and D. N. Payne, J. Appl. Phys. 75, 519 (1994).
T. Yano, A. Fukumoto and A. Watanabe, J. Appl. Phys. 42, 3674 (1971).
V. M. Kotov, G. N. Shkerdin, D. G. Shkerdin and E. V. Kotov, J. Opt. Technol. 72, 511 (2005).
R. Nayak, V. Gupta, A. L. Dawar and K. Sreenivas, Thin Solid Films 445, 118 (2003).
N. Dewan, V. Gupta, K. Sreenivas and R. S. Katiyar, J. Appl. Phys. 101, 084910 (2007).
S. Kumar and A. Mansingh, J. Phys. D: Appl. Phys. 23, 1252, (1990).
M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura and T. Yamashita, J. Appl. Phys. 54, 5376 (1983).
K. Arshak and O. Korostynska, Sensors 2, 347 (2002).
S. M. Pietralunga, M. Lanata, M. Fere, D. Piccinin, G. Cusmai, M. Torregiani and M. Martinelli, Opt. Express 16, 21662 (2008).
N. Dewan, K. Sreenivas and V. Gupta, Sens. Actuators A 147, 115 (2008).
S. Sen, K. P. Muthe, N. Joshi, S. C. Gadkari, S. K. Gupta, Jagannath, M. Roy, S. K. Deshpande and J. V. Yakhmi, Sens. Actuators B 98, 154 (2004).
T. Siciliano, M. Di Giulio, M. Tepore, E. Filippo, G. Micocci and A. Tepore, Sens. Actuators B 137, 644 (2009).
T. Siciliano, M. Di Giulio, M. Tepore, E. Filippo, G. Micocci and A. Tepore, Sens. Actuators B 138, 550 (2009).
T. Siciliano, A. Tepore, G. Micocci, A. Genga and E. Filippo, Sens. Actuators B 138, 207 (2009).
B. Jeansannetas et al., J. Solid State Chem. 146, 329 (1999).
T. Siciliano, M. Di Giulio, M. Tepore, E. Filippo, G. Micocci and A. Tepore, Vaccum 84, 935 (2010).
M. F. Al-Kuhaili, S. M. A. Durrani, E. E. Khawaja and J. Shirokoff, J. Phys. D: Appl. Phys. 35, 910 (2002).
S. N. B. Hodgson, and L. Weng, J. Sol-Gel Sci. Technol. 18, 145 (2000).
N. Dewan, K. Sreenivas and V. Gupta, J. Cryst. Growth 305, 237 (2007).
L. I. Qinghui, G. U. Donghong and G. A. N. Fuxi, J. Mater. Sci. Technol. 20, 678 (2004).
N. Uchida, Phys. Rev. B 4, 3736 (1971).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kong, H., Yeo, JB. & Lee, HY. A Study on the properties of tellurium-oxide thin films based on the variable sputtering gas ratio. Journal of the Korean Physical Society 66, 1744–1749 (2015). https://doi.org/10.3938/jkps.66.1744
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.66.1744