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Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

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Abstract

The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

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Authors and Affiliations

  1. Department of Semiconductor Science and Technology/Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756, Korea

    J. J. Kim, J. H. Lim & J. W. Yang

  2. Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, 15261, USA

    W. Stanchina

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  1. J. J. Kim
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  2. J. H. Lim
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  3. J. W. Yang
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  4. W. Stanchina
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Correspondence to J. W. Yang.

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Kim, J.J., Lim, J.H., Yang, J.W. et al. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT. Journal of the Korean Physical Society 65, 421–424 (2014). https://doi.org/10.3938/jkps.65.421

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  • DOI: https://doi.org/10.3938/jkps.65.421

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