Abstract
High-indium-composition In x Ga1−x N (x = 0.2, 0.25 and 0.35) epilayers have been deposited on GaN (0001) by using radio-frequency plasma-assisted molecular beam epitaxy. The effects of the thin GaN interlayers on the structural and the optical properties were investigated. The GaN interlayers were grown at 500 °C, which was higher than the growth temperatures for the InGaN layers. InGaN layers grown directly on the GaN substrates resulted in a mixture of two-dimensional/three-dimensional growth, while two-dimensional growth was maintained. Moreover, the crystalline quality and the photoluminescence were greatly improved with the GaN interlayers.
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Wang, Z., Wu, H., Wang, T. et al. Effects of GaN interlayers on the Structual and the optical properties of high-indium-composition InGaN. Journal of the Korean Physical Society 64, 1036–1039 (2014). https://doi.org/10.3938/jkps.64.1036
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DOI: https://doi.org/10.3938/jkps.64.1036