Abstract
A review of recent results and new data on the study of the optical response from semiconductor nanocrystals obtained using plasmon-enhanced optical spectroscopy, including surface enhanced Raman scattering (SERS) and plasmon-enhanced IR absorption, is presented. These methods are based on the amplification of the phonon response of semiconductor nanocrystals located in the field of localized surface plasmon resonance (LSPR) of metal nanostructures. Owing to the choice of a specific morphology of metal nanostructures, coincidence of the LSPR energy with the laser excitation energy and / or the energy of optical phonons in nanocrystals is provided. Resonant conditions ensure a significant increase in local electric fields and, as a result, a sharp increase in the Raman signal and IR absorption at the frequencies of surface optical phonons of nanocrystals. Amplification of the optical response makes it possible not only to detect monolayer coatings of nanocrystals, but also to study their crystal structure, phase and element compositions, and internal mechanical stresses. Application of Raman scattering (RS) in combination with atomic force microscopy with the use of a metallized probe has opened up new possibilities for analyzing the vibrational and electronic spectra of nanocrystals with nanometer spatial resolution
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ACKNOWLEDGMENTS
The authors thank the VTAN shared resource center of the Novosibirsk State University and also the Nanostructures shared resource center of the Rzhanov Institute of Semiconductor Physics SB RAS for using the equipment.
Funding
The research was supported by the RF Ministry of Education and Science, the Volkswagen Foundation, the Russian Foundation for Basic Research, and the German Research Foundation, projects nos. 18-02-00615_a, 18-29-20066 mk, and 19-52-12041 NNIO_a).
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Translated by V. A. Alekseev
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Milekhin, A.G., Duda, T.A., Rodyakina, E.E. et al. Plasmon-Enhanced Vibrational Spectroscopy of Semiconductors Nanocrystals. Optoelectron.Instrument.Proc. 56, 503–509 (2020). https://doi.org/10.3103/S8756699020050076
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DOI: https://doi.org/10.3103/S8756699020050076