Abstract
Negative differential resistance in InGaN/GaN ultraviolet laser diodes is demonstrated. Switching between the lower and upper branches of the S-shaped current-voltage characteristic leads to a change in the optical emission power by six orders of magnitude as the current increases from 3 to 15 mA. The occurrence of a negative differential resistance is explained by superlinear injection of charge carriers of the same sign into the high-resistance InGaN quantum well.
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Original Russian Text © V.T. Shamirzaev, V.A. Gaisler, T.S. Shamirzaev, 2016, published in Avtometriya, 2016, Vol. 52, No. 5, pp. 31–36.
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Shamirzaev, V.T., Gaisler, V.A. & Shamirzaev, T.S. Negative differential resistance in high-power InGaN/GaN laser diode. Optoelectron.Instrument.Proc. 52, 442–446 (2016). https://doi.org/10.3103/S8756699016050058
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DOI: https://doi.org/10.3103/S8756699016050058