Skip to main content
SpringerLink
Log in

Experimental Analysis of the Effect of Shape of Shock Current Pulses on the Thermal State of a Semiconductor Device

  • Published:
Russian Electrical Engineering Aims and scope Submit manuscript

Abstract

The effect of shape of shock current pulses on the thermal state of a semiconductor device has been experimentally analyzed. The technological process of changing the parameters of a device under the action of disturbing factors has been described. Based on the heat-balance equation, the analytical expression to estimate the temperature of a semiconductor chip has been obtained. The experimental dependences that characterize a change in the parameters of the device under the influence of shock current pulses with various shapes has been presented. The characteristics of the device when using sinusoidal current pulses and dc pulses have been compared.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. Dedkov, V.K., Principles for generating criteria of functioning efficiency of complex engineering systems, Nadezhnost’ Kachestvo Slozhnykh Sist., 2013, no. 4, pp. 3–8.

  2. Ershov, A.B., Khorolsky, V.Ya., Atanov, I.V., and Efanov, A.V., Control of the power semiconductor thermal mode involving the concept of transient thermal impedance, Russ. Electr. Eng., 2019, vol. 90, pp. 199–203.  https://doi.org/10.3103/S1068371219030088

    Article  Google Scholar 

  3. Pavlyuk, S.P., Savitskiy, S.M., Soltys, R.B., and Tishchenko, I.Yu., The resistance change of the power diodes under the influence of the surge current impulses, Tekhnol. Konstruirovanie Elektron. Apparature, 2007, no. 6, pp. 33–35.

Download references

Author information

Authors and Affiliations

  1. Stavropol State Agrarian University, 355017, Stavropol, Russia

    I. V. Atanov, V. Ya. Khorol’skii, Sh. Zh. Gabrielyan & V. G. Zhdanov

Authors
  1. I. V. Atanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. Ya. Khorol’skii
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Sh. Zh. Gabrielyan
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. G. Zhdanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. V. Atanov.

Ethics declarations

The authors declare that they have no conflicts of interest.

Additional information

Translated by M. Astrov

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Atanov, I.V., Khorol’skii, V.Y., Gabrielyan, S.Z. et al. Experimental Analysis of the Effect of Shape of Shock Current Pulses on the Thermal State of a Semiconductor Device. Russ. Electr. Engin. 93, 431–434 (2022). https://doi.org/10.3103/S1068371222070045

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068371222070045

Keywords:

Search

Navigation