Abstract
The possibilities for mode selection in mesa-stripe lateral waveguides for single-mode operation of lasers with a surface distributed Bragg reflector (DBR) are theoretically investigated. The dependence of the mode discrimination of the TE00 and TE01 lateral modes on the parameters of the laser crystal (mesa-stripe width, mesa-groove depth, and DBR depth) is analyzed. An algorithm for selection of these parameters depending on the required generation spectral width for a given design of heterostructure is demonstrated. A possibility for an increase in the width of the emitting aperture with maintaining of the single-mode lasing is shown. In this case, the selection of lateral modes in narrow mesa-stripe waveguides is achieved due to the difference in the DBR reflection coefficients for the TE00 and TE01 modes at a given DBR length. The resulting increase in the aperture can be used to increase the optical power of the laser in the single-mode regime.
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REFERENCES
Qiu, P., Wu, B., Fu, P., Li, M., Xie, Y., and Kan, Q., IEEE Photon. J., 2021, vol. 13, p. 4.
Tronciu, V., Werner, N., Wenzel, H., and Wunsche, H.-J., IEEE J. Quantum Electron., 2021, vol. 57, p. 1.
Zolotarev, V.V., Leshko, A.Y., Shamakhov, V.V., Nikolaev, D.N., Golovin, V.S., Slipchenko, S.O., and Pikhtin, N.A., Semicond. Sci. Technol., 2020, vol. 35, p. 015009.
Shashkin, I.S., Leshko, A.Yu., Nikolaev, D.N., et al., Semiconductors, 2020, vol. 54, p. 489.
Shashkin, I.S., Leshko, A.Yu., Nikolaev, D.N., et al., Semiconductors, 2020, vol. 54, p. 484
Shashkin, I.S., Leshko, A.Yu., Shamakhov, V.V., et al., Tech. Phys. Lett., 2021, vol. 47, p. 368
Shashkin, I.S., Leshko, A.Yu., Shamakhov, V.V., et al., Semiconductors, 2021, vol. 55, p. 455
Slipchenko, S.O., Shashkin, I.S., Veselov, D.A., Kriychkov, V.A., Kazakova, A.E., Leshko, A.Y., Shamakhov, V.V., Nikolaev, D.N., and Pikhtin, N.A., J. Light. Technol., 2022, vol. 40, p. 2933.
Paschotta, R., Nilsson, J., Tropper, A.C., and Hanna, D.C., IEEE J. Quantum Electron., 1997, vol. 33, p. 1049.
Koechner, W., Solid-State Laser Engineering, New York: Springer, 2006.
Zlatanovic, S., Park, J.S., Moro, S., Boggio, J.M.C., Divliansky, I.B., Alic, N., and Mookherjea, S., Radic S. Nat. Photonics, 2010, vol. 4, p. 561.
Amiri, I.S., Rashed, A.N.Z., Mohammed, A.E.A., El-Din, E.S., and Yupapin, P., J. Opt. Commun., 2019, vol. 44, no. 1. https://doi.org/10.1515/joc-2019-0061
Shibuya, K., Podzorov, A., Matsuhama, M., Nishimura, K., and Magari, M., Meas. Sci. Technol., 2020, vol. 32, p. 035201.
Podoskin, A.A., Golovin, V.S., Gavrina, P.S., Veselov, D.A., Zolotarev, V.V., Shamakhov, V.V., Nikolaev, D.N., Leshko, A.Yu., Slipchenko, S.O., Pikhtin, N.A., Kopév, P.S., Appl. Opt., 2019, vol. 58, p. 9089.
Podoskin, A.A., Golovin, V.S., Gavrina, P.S., Veselov, D.A., Zolotarev, V.V., Shamakhov, V.V., Nikolaev, D.N., Shashkin, I.S., Slipchenko, S.O., Pikhtin, N.A., and Kopév, P.S., J. Opt. Soc. Am. B, 2020, vol. 37, p. 784.
Gourevitch, A., Venus, G., Smirnov, V., Hostutler, D.A., and Glebov, L., Opt. Lett., 2008, vol. 33, p. 702.
Ivanov, S.A., Nikonorov, N.V., Ignat’ev A.I., Zolotarev, V.V., Lubyanskii, Ya.V., Pikhtin N.A., and Tarasov, I.S., Semiconductors, 2016, vol. 50, p. 819.
Fan, T.Y. and Byer, R.L., IEEE J. Quantum Electron., 1988, vol. 24, p. 895.
Fricke, J., Decker, J., Maaßdorf, A., Wenzel, H., Erbert, G., Knigge, A., and Crump, P., Semicond. Sci. Technol., 2017, vol. 32, p. 075012.
Knigge, A., Klehr, A., Wenzel, H., Zeghuzi, A., Fricke, J., Maaßdorf, A., Liero, A., and Tränkle, G., Phys. Status Sol. Appl. Mater. Sci., 2018, vol. 215, p. 1700439.
Li, B., Gao, J., Yu, A., Luo, S., Xiong, D., Wang, X., and Zuo, D., Opt. Laser Technol., 2017, vol. 96, p. 176.
Zolotarev, V.V., Leshko, A.Yu., Pikhtin N.A., et al., Quantum Electron., 2015, vol. 45, p. 1091
Decker, J., Crump, P., Fricke, J., Maassdorf, A., Erbert, G., and Trankle, G., IEEE Photon. Technol. Lett., 2014, vol. 26, p. 829.
Zolotarev, V.V., Leshko, A.Yu., Lyutetskii, A.V., Nikolaev, D.N., Pikhtin, N.A., Podoskin, A.A., Slipchenko, S.O., Sokolova, Z.N., Shamakhov, V.V., Arsent’ev, I.N., Vavilova, L.S., Bakhvalov, K.V., and Tarasov, I.S., Semiconductors, 2013, vol. 47, p. 122.
Kogelnik, H. and Shank, C.V., J. Appl. Phys., 1972, vol. 43, p. 2327.
Kogelnik, H. and Shank, C.V., Appl. Phys. Lett., 1971, vol. 18, p. 152.
Agrawal, G.P. and Dutta, N.K., Semiconductor Lasers, New York: Springer, 1993.
Leshko, A.Yu., Lyutetskii, A.V., Pikhtin, N.A., Slipchenko, S.O., Sokolova, Z.N., Fetisova, N.V., Golikova, E.G., Ryaboshtan, Yu.A., and Tarasov, I.S., Semiconductors, 2002, vol. 36, p. 1308.
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This work was supported by the Russian Science Foundation (project no. 19-79-30072).
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Translated by A. Chikishev
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Zolotarev, V.V., Rizaev, A.E., Lutetskiy, A.V. et al. Mode Selection of a Lateral Waveguide for Single-Mode Operation of Lasers with a Distributed Bragg Reflector. Bull. Lebedev Phys. Inst. 50 (Suppl 2), S154–S162 (2023). https://doi.org/10.3103/S1068335623140178
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DOI: https://doi.org/10.3103/S1068335623140178