Skip to main content
SpringerLink
Log in

Features of the Microstructure of the Surface Region of the Photoelectric Converter with a Porous Silicon Antireflection Film and an n+-p Junction Formed by Laser Radiation

  • Published:
Bulletin of the Lebedev Physics Institute Aims and scope Submit manuscript

Abstract

The microstructure of the surface region of the silicon photoelectric converter with an n+-p junction and an antireflection porous silicon film is studied by scanning electron microscopy and Raman spectroscopy methods. The n+-p junction was formed by laser irradiation of the surface of a porous silicon film containing a phosphorus impurity. It is shown that laser irradiation causes partial recrystallization of the porous silicon film and the n+-p junction formation within silicon crystallites.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Handbook of Porous Silicon, Ed. by L. Canham (Springer, Cham, 2014).

  2. V. V. Tregulov, V. A. Stepanov, and N. N. Melnik, St. Petersburg Polytechnic. University Journal. Physics and Mathematics 11(1), 18 (2018).

    Google Scholar 

  3. J. M. Fairfield and G. H. Schwuttke, Solid-State Electron. 12, 1175 (1968).

    Google Scholar 

  4. S. A. Pyachin and M. A. Pugachevskii, New Technologies of Functional Nanomaterials: Laser Ablation, Electrospark Method (Khabarovsk, 2013).

    Google Scholar 

  5. W. J. Salcedo, F. R. Fernandez, and J. C. Rubimc, Braz. J. Phys. 29, 751 (1999).

    Article  ADS  Google Scholar 

  6. M. Yang, D. Huang, and P. Hao, J. Appl. Phys. 75, 651 (1994).

    Article  ADS  Google Scholar 

  7. V. Lavrentiev, J. Vacik, V. Vorlicek, and V. Vosecek, Phys. Status Solidi B 247, 2022 (2010).

    Article  ADS  Google Scholar 

  8. N. N. Melnik, V. L. Fedorov, and V. V. Tregulov, Kratkie Soobshcheniya po Fizike FIAN 46(1), 23 (2019) [Bull. Lebedev Phys. Inst. 46, 36 (2019)].

    Google Scholar 

  9. A. V. Dvurechenskii, G. A. Kachurin, E. V. Nidaev, and L. S. Smirnov, Pulsed Annealing of Semiconductor Materials (Nauka, Moscow, 1982) [in Russian].

    Google Scholar 

  10. T. D. Dzhafarov, Photostimulated Atomic Processes in Semiconductors (Energoatomizdat, Moscow, 1984) [in Russian].

    Google Scholar 

Download references

Acknowledgments

The results were obtained within the State contract of the Ministry of Education and Science of the Russian Federation no. 3 in the Yesenin Ryazan State University.

Author information

Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii Pr., Moscow, 119991, Russia

    N. N. Melnik

  2. Yesenin Ryazan State University, 46 Svobody St., Ryazan, 390000, Russia

    V. V. Tregulov & V. A. Stepanov

  3. Ryazan State Radio Engineering University, 59/1 Gagarina St., Ryazan, 390005, Russia

    N. B. Rybin

Authors
  1. N. N. Melnik
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Tregulov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. B. Rybin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. A. Stepanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. N. Melnik.

Additional information

Russian Text © The Author(s), 2019, published in Kratkie Soobshcheniya po Fizike, 2019, Vol. 46, No. 6, pp. 17–24.

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Melnik, N.N., Tregulov, V.V., Rybin, N.B. et al. Features of the Microstructure of the Surface Region of the Photoelectric Converter with a Porous Silicon Antireflection Film and an n+-p Junction Formed by Laser Radiation. Bull. Lebedev Phys. Inst. 46, 197–200 (2019). https://doi.org/10.3103/S1068335619060034

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068335619060034

Keywords

Search

Navigation