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Thermal stability of ultrahard polycrystalline diamond composite materials

  • Production, Structure, Properties
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Abstract

Thermal stability of the ultrahard polycrystalline diamond (UHPCD) composite material developed by the reinforcement of the polycrystalline diamond (PCD) with chemical vapor deposition (CVD) diamond has been investigated in a flow of argon at 1200°C. The indentation, Raman spectra and wear test have been performed to compare hardness, C-C structure and wear resistance of untreated and thermal treated UHPCD. It has been shown that the hardness of CVD diamond in UHPCD attains 133 ± 7 GPa after high pressure and high temperature (HP-HT), while after thermal treatment the hardness decreases to 109 ± 3 GPa, and the wear resistance of the thermal treated UHPCD decreases from 0.17 to 0.6 mg/km. The narrowing of full width at half maximum (FWHM) and shift of Raman peak to lower frequencies of CVD diamond in thermal treated UHPCD imply a decrease of crystal structural defects and compressive stresses, which results in a drop of the hardness of CVD diamond in a thermal treated UHPCD. The higher wear rate of thermal treated UHPCD is due to the lower hardness.

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Authors and Affiliations

  1. School of Engineering and Technology, China University of Geosciences (Beijing), Beijing, 100083, China

    D. Meng, W. Yue, F. Lin & C. Wang

  2. Key Laboratory of Deep Geo-drilling Technology of the Ministry of Land and Resources, China University of Geosciences (Beijing), Beijing, 100083, China

    D. Meng, W. Yue & C. Wang

  3. Beijing Huayou Guanchang Environment and Energy Science & Technology Development Co., LTD, Beijing, 100020, China

    Z. Wu

Authors
  1. D. Meng
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  2. W. Yue
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  3. F. Lin
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  4. C. Wang
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  5. Z. Wu
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Corresponding author

Correspondence to W. Yue.

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The text was submitted by the authors in English.

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Meng, D., Yue, W., Lin, F. et al. Thermal stability of ultrahard polycrystalline diamond composite materials. J. Superhard Mater. 37, 67–72 (2015). https://doi.org/10.3103/S106345761502001X

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  • DOI: https://doi.org/10.3103/S106345761502001X

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