Abstract
The effect elastic strain and piezoelectric charge redistributions have on the transmission of current is considered in a nonuniformly strained carbon nanotube. Both processes result in a reproducible resistive switching effect, allowing the fabrication of memristor structures based on them.
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Original Russian Text © M.V. Il’ina, Yu.F. Blinov, O.I. Il’in, A.V. Guryanov, O.A. Ageev, 2017, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2017, Vol. 81, No. 12, pp. 1681–1686.
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Il’ina, M.V., Blinov, Y.F., Il’in, O.I. et al. Model of resistive switching in a nonuniformly strained carbon nanotube. Bull. Russ. Acad. Sci. Phys. 81, 1485–1489 (2017). https://doi.org/10.3103/S1062873817120140
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DOI: https://doi.org/10.3103/S1062873817120140