Skip to main content
SpringerLink
Log in

Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs

  • Proceedings of the XIV International Conference “Luminescence and Laser Physics”
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Szczytko, J., Kappei, L., Berney, J., et al., Phys. Rev. B, 2004, vol. 93, p. 137401.

    Google Scholar 

  2. Shah, J., Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures, Berlin, Heidelberg: Springer, 1999.

    Book  Google Scholar 

  3. Kaindl, R.A., Hägele, D., Carnahan, M.A., and Chemla, D.S., Phys. Rev. B, 2009, vol. 79, p. 045320.

    Article  ADS  Google Scholar 

  4. Kozhemyakina, E.V., Zhuravlev, K.S., Amo, A., et al., Appl. Phys. Lett., 2009, vol. 95, p. 182107.

    Article  ADS  Google Scholar 

  5. Fernandez-Rossier, J., Tejedor, C., Munoz, L., and Vina, L., Phys. Rev. B, 1996, vol. 54, p. 11582.

    Article  ADS  Google Scholar 

  6. Zhuravlev, K.S., Toropov, A.I., Shamirzaev, T.S., and Bakarov, A.K., Appl. Phys. Lett., 2000, vol. 76, p. 1131.

    Article  ADS  Google Scholar 

  7. Leo, K., Rühle, W.W., and Ploog, K., Phys. Rev. B, 1988, vol. 38, p. 1947.

    Article  ADS  Google Scholar 

  8. Piermarocchi, C., Tassone, F., Savona, V., et al., Phys. Rev. B, 1997, vol. 55, p. 1333.

    Article  ADS  Google Scholar 

  9. Selbmann, P.E., Gulia, M., Rossi, F., and Molinari, E., Phys. Rev. B, 1996, vol. 54, p. 4660.

    Article  ADS  Google Scholar 

  10. Kumar, R., Vengurlekar, A.S., Prabhu, S.S., et al., Phys. Rev. B, 1996, vol. 54, p. 4891.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    E. V. Kozhemyakina & K. S. Zhuravlev

Authors
  1. E. V. Kozhemyakina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. S. Zhuravlev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to E. V. Kozhemyakina.

Additional information

Original Russian Text © E.V. Kozhemyakina, K.S. Zhuravlev, 2016, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2016, Vol. 80, No. 1, pp. 28–32.

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Kozhemyakina, E.V., Zhuravlev, K.S. Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs. Bull. Russ. Acad. Sci. Phys. 80, 23–27 (2016). https://doi.org/10.3103/S1062873816010135

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1062873816010135

Keywords

Search

Navigation