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Interaction modes in Mo/Si diffusion couple at non-isothermal conditions

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Abstract

Non-isothermal siliconizing in Si-clad Mo wires has been studied over a wide range of heating rates V h and silicon layer thicknesses δSi. At T = 1000–1600°C, the reaction was found to proceed in two stages: by Mo(s) + Si(s) mechanism (stage I) and by Mo(s) + Si(l) mechanism (stage II). For sufficiently thin silicon layers, non-isothermal Mo-Si reaction is single-step and ends up before reaching the melting point of silicon: a decrease in the heating rate is accompanied by marked expansion of a range of Si layer thickness (δSi) within which the Mo-Si reaction accomplishes at stage I. Based on the above data, the V h-δSi diagram discerning four different siliconizing modes of Mo was plotted. Within a wide range of heating rates and for sufficiently small Mo particles non-isothermal reaction of Mo with Si may proceed by purely solid-state mechanism.

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Authors and Affiliations

  1. Nalbandyan Institute of Chemical Physics, National Academy of Sciences, 5/2 Sevak str., Yerevan, 0014, Armenia

    S. L. Kharatyan, M. A. Aghayan & H. A. Chatilyan

  2. Department of Inorganic and Analytical Chemistry, Yerevan State University, 1 Manukyan str., Yerevan, 0025, Armenia

    S. L. Kharatyan

Authors
  1. S. L. Kharatyan
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  2. M. A. Aghayan
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  3. H. A. Chatilyan
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Correspondence to S. L. Kharatyan.

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Kharatyan, S.L., Aghayan, M.A. & Chatilyan, H.A. Interaction modes in Mo/Si diffusion couple at non-isothermal conditions. Int. J Self-Propag. High-Temp. Synth. 23, 138–140 (2014). https://doi.org/10.3103/S1061386214030054

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  • DOI: https://doi.org/10.3103/S1061386214030054

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