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Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics

  • SOLAR ENGINEERING MATERIALS SCIENCE
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Abstract

The results of a study of a photovoltaic silicon structure with two Schottky barriers are presented. It is revealed that Au–nSi–Au structures in a temperature range of room temperature to 40°C at low operating voltages of 0.1–0.2 V are characterized by a weak temperature dependence of the photocurrent. As a result, there is a gradual increase in the light current, which ensures high photosensitivity values under low light.

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REFERENCES

  1. Fiber Optic Sensors: An Introduction for Engineers and Scientists, Udd, E., Ed., New York: Wiley, 1991.

    Google Scholar 

  2. Varava, N., Pronin, S., and Nikonorov, M., Fiber optics active components in control systems for packet communication systems, Volokon.-Opt. Tekhnol., 2013, no. 2, pp. 66–73.

  3. Alferov, Zh.I., The double heterostructure: the concept and its applications in physics, electronics, and technology (Nobel Lecture), ChemPhysChem, 2001, vol. 2, nos. 8–9, pp. 500–513.

    Article  Google Scholar 

  4. Omori, E., Shimizu, H., and Ikeda, M., Analysis of Au/Si Schottky barrier type AC surface photovoltage in silicon wafer surface dipped into Au aqueous solution, Electron. Commun. Jpn., Part II: Electron., 2007, vol. 90, no. 6, pp. 27–33.

    Article  Google Scholar 

  5. Yodgorova, D.M. and Yakubov, E.N., Detectors of optical signal on the basis of Au–nSi–Al and Au–nSi, Tekhnol. Konstruir. Elektron. Appar., 2005, no. 4, pp. 39–42.

  6. Sergeev, B., Optoelectronic control circuits for high-power MOS transistors, Sovrem. Elektron., 2008, no. 6, pp. 38–41.

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ACKNOWLEDGMENTS

The work was performed within the project FA-A3-003 “Development of a control-and-test device for the diagnostics of fiber-optical systems.”

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Authors and Affiliations

  1. Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, Uzbekistan

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova & N. I. Usmanova

  2. Luikov Heat and Mass Transfer Institute, National Academy of Science of Belarus, 220072, Minsk, Belarus

    E. M. Shpilevskiy

Authors
  1. A. V. Karimov
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  2. D. M. Yodgorova
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  3. F. A. Giyasova
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  4. E. M. Shpilevskiy
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  5. N. I. Usmanova
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Corresponding author

Correspondence to F. A. Giyasova.

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Translated by M. Kromin

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Karimov, A.V., Yodgorova, D.M., Giyasova, F.A. et al. Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics. Appl. Sol. Energy 54, 330–332 (2018). https://doi.org/10.3103/S0003701X18050109

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  • DOI: https://doi.org/10.3103/S0003701X18050109

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