Abstract
Three different species (nitrogen, xenon and argon) were evaluated to change the stress of a tensile PECVD nitride film by plasma immersion ion implantation. The nitride layer integrity was maintained for all PIII processes save for the highest dose and energy for xenon. However, a variation of the Refractive Index with increasing dose was observed, indicating some stress evolution in the nitride layer. Argon was as efficient to change the nitride stress as nitrogen, both species modifying the nitride stress from initially tensile into compressive.
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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
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Acknowledgments
This project received funding from the ECSEL Joint Undertaking (JU) under Grant Agreement No. 783127 (ECSEL project OCEAN 12). The JU received support from the European Union’s Horizon 2020 research and innovation program and France, Germany, Austria, Portugal, Greece, Spain, Poland.
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Lachal, L., Plantier, C., Torregrosa, F. et al. Nitride stress inversion using plasma immersion ion implantation processes. MRS Advances 7, 1390–1394 (2022). https://doi.org/10.1557/s43580-022-00468-z
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DOI: https://doi.org/10.1557/s43580-022-00468-z