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Detection of particles in the ion beam

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Abstract

In this study, we develop a new particle-monitoring system for a single-wafer implanter. The system is characterized by the (1) observation of particles in the ion beam during implantation and (2) detection of particle generation through image analysis. The proposed setup comprises a laser system and a high-sensitivity video camera. When injecting a laser beam that crosses the ion beam, some of the laser beam is scattered by the particles. This scattered light is recorded using a video camera, and the images are analyzed to estimate the particle number on a wafer. The system is evaluated by placing test particles in the ion beam to estimate the particle number on a wafer. Under the present configuration, the results indicate that the particle number on a wafer is roughly proportional to an alternative indicator.

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Data availability

The datasets generated and/or analyzed during the current study are available from the corresponding author upon reasonable request.

References

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Acknowledgments

We appreciate Ms. Aki Ninomiya for her contribution to the planning and implementation of this project.

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Authors and Affiliations

  1. Sumitomo Heavy Industries Ion Technology Co., Ltd., 1501 Imazaike, Saijo, Ehime, 799-1362, Japan

    Hiroshi Matsushita, Takanori Yagita & Takao Morita

  2. Sumitomo Heavy Industries, Ltd., 19 Natsushima, Yokosuka, Kanagawa, 237-8555, Japan

    Sayumi Hirose

Authors
  1. Hiroshi Matsushita
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  2. Sayumi Hirose
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  3. Takanori Yagita
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  4. Takao Morita
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Corresponding author

Correspondence to Hiroshi Matsushita.

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Matsushita, H., Hirose, S., Yagita, T. et al. Detection of particles in the ion beam. MRS Advances 7, 1509–1514 (2022). https://doi.org/10.1557/s43580-022-00394-0

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  • DOI: https://doi.org/10.1557/s43580-022-00394-0

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