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Overview and outlook of emerging non-volatile memories

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Abstract

Memory technologies with higher density, higher bandwidth, lower power consumption, higher speed, and lower cost are in high demand in the current big data era. In this paper, recent progress of emerging non-volatile memories is reviewed. The current status, challenges, and opportunities of emerging non-volatile memories, such as phase-change memory, resistive random-access memory, ferroelectric field-effect transistors, and magnetic random-access memory, are discussed toward storage-class memory, embedded non-volatile memories, and near/in-memory computing applications.

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  1. Elmore Family School of Electrical and Compute Engineering, Purdue University, West Lafayette, USA

    Mengwei Si & Peide D. Ye

  2. Macronix International Co., Ltd., Emerging Central Lab., Hsinchu, Taiwan, ROC

    Huai-Yu Cheng

  3. IBM T. J. Watson Research Center, Yorktown Heights, USA

    Takashi Ando & Guohan Hu

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Si, M., Cheng, HY., Ando, T. et al. Overview and outlook of emerging non-volatile memories. MRS Bulletin 46, 946–958 (2021). https://doi.org/10.1557/s43577-021-00204-2

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