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Novel characterization of dopant-based qubits

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Abstract

Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building scalable quantum processing architectures relies on accurate quantum state manipulation, which can only be achieved through a complete understanding of the underlying quantum state properties. This article reviews the electrical methods that have been developed to probe the quantum states encoded in individual and interacting atom qubits in silicon, from the pioneering single electron-tunneling spectroscopy framework in nanoscale transistors, to radio frequency reflectometry to probe coherence properties and scanning tunneling microscopy to directly image the wave function at the atomic scale. Together with the development of atomistic simulations of realistic devices, these methods are today applied to other emerging dopant and optically addressable defect states to accelerate the engineering of quantum technologies in silicon.

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Acknowledgments

This article is dedicated to M. Sanquer. We acknowledge support from the ARC Centre of Excellence for Quantum Computation and Communication Technology (Grant No. CE170100012), Silicon Quantum Computing Pty. Ltd., and from the US Army Research Office (Grant No. W911NF-17-1-0202). J.S. acknowledges support from the National Science and Engineering Research Council of Canada.

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Authors and Affiliations

  1. Silicon Quantum Computing, and School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia

    Benoit Voisin

  2. Stewart Blusson Quantum Matter Institute, Department of Electrical and Computer Engineering, The University of British Columbia, Vancouver, BC, V6T 1Z4, Canada

    Joseph Salfi

  3. School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia

    Rajib Rahman

  4. Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia

    Sven Rogge

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  1. Benoit Voisin
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Correspondence to Benoit Voisin.

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Voisin, B., Salfi, J., Rahman, R. et al. Novel characterization of dopant-based qubits. MRS Bulletin 46, 616–622 (2021). https://doi.org/10.1557/s43577-021-00136-x

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