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Stoichiometry of GaAs nanodots on GaAs(001)

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Abstract

We present a strain-free, self-assembled GaAs nanodots on GaAs(001) surfaces. Nanodots are studied by atomic force microscopy and field emission scanning electron microscopy. Nanodots self-assemble on the GaAs surface when two laser pulses overlap on the surface interferentially. Their stoichiometry is characterized by energy dispersive X-ray spectroscopy in the electron microscope. For the stoichiometry study, electrons with voltages less than 5 kilovolts were used to produce the characteristic X-rays from dots in order to enhance the surface sensitivity. The stoichiometric analysis indicates that the nanodots’ relative composition ratio of Ga over As reaches to that of GaAs substrate when the dot size becomes smaller than 100 nm. The chemical analysis suggests a novel route of strain-free semiconductor nanodots.

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Acknowledgments

The work is supported by the National Aeronautics and Space Administration (Cooperative Agreement Number: NNX13AD31A). Also financial support from the National Science Foundation, grant numbers 0854313, 0903804 and 114 3543 is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD, 57701, USA

    Haeyeon Yang & Anahita Haghizadeh

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  1. Haeyeon Yang
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  2. Anahita Haghizadeh
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Correspondence to Haeyeon Yang.

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Yang, H., Haghizadeh, A. Stoichiometry of GaAs nanodots on GaAs(001). MRS Online Proceedings Library 1748, 63–68 (2014). https://doi.org/10.1557/opl.2015.669

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