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Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

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Abstract

CuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

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Authors and Affiliations

  1. Department of Physics /Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, Oslo, N-0316, Norway

    Jiantuo Gan, Augustinas Galeckas, Vishnukanthan Venkatachalapathy, Heine N. Riise, Bengt G. Svensson & Edouard V. Monakhov

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  1. Jiantuo Gan
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  2. Augustinas Galeckas
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  3. Vishnukanthan Venkatachalapathy
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  4. Heine N. Riise
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  5. Bengt G. Svensson
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  6. Edouard V. Monakhov
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Gan, J., Galeckas, A., Venkatachalapathy, V. et al. Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering. MRS Online Proceedings Library 1792, 334 (2015). https://doi.org/10.1557/opl.2015.596

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