Abstract
Self-catalyzed growth of position-defined InP nanowires (NWs) was investigated on SiO2-mask-pattered Si substrates using metalorganic vapor-phase epitaxy. Using low growth temperatures and high group-III flow rates, pyramidal InP NWs were formed vertically on the mask openings. The diameter and tapering of the InP NWs were successfully controlled by the introduction of HCl and H2S gases during the NW growth. In addition, crystal growth of radial InP/InAsP/InP quantum wells on the sidewall of the InP NWs was performed on Si substrates.
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Acknowledgments
We thank Y. Kinoue and K. Sasaki for the technical supports. This work was supported by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
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Kawaguchi, K., Sudo, H., Matsuda, M. et al. Self-catalyzed InP Nanowires on Patterned Si Substrates. MRS Online Proceedings Library 1751, 25–30 (2015). https://doi.org/10.1557/opl.2015.477
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DOI: https://doi.org/10.1557/opl.2015.477