Abstract
In this work we examine the electrical characteristics and the memory properties of metal-alumina-nitride-oxide-silicon (MANOS) devices as a function of the post deposition annealing conditions. Post deposition annealing of the samples was performed at 850 or 1050 °C in nitrogen ambient using two different processes: (1) Furnace annealing for 15 min and (2) rapid thermal annealing for 1 or 5 min. The capacitance equivalent thickness as extracted from the capacitance voltage characteristics depends strongly on the annealing process, being smallest for the furnace annealing. Furthermore, the experimental results indicate that the type of the annealing determines the defect state density of the Al2O3 layer, via which the undesired effect of gate electrode electron injection takes place in the negative voltage regime. For inert ambient annealing the furnace process appears more efficient as compared to RTA.
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Acknowledgments
This research has been co-financed by the European Union (European Social Fund -ESF) and Greek national funds through the Operational Program “Education and Lifelong Learning” of the National Strategic Reference Framework (NSRF) - Research Funding Program: Heracleitus II. Investing in knowledge society through the European Social Fund. Part of the work was done in Finnish Centre of Excellence in Atomic Layer Deposition, funded by Academy of Finland.
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Ioannou-Sougleridis, V., Nikolaou, N., Dimitrakis, P. et al. MANOS erase performance dependence on nitrogen annealing conditions. MRS Online Proceedings Library 1729, 15–20 (2014). https://doi.org/10.1557/opl.2015.212
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DOI: https://doi.org/10.1557/opl.2015.212