Abstract
We analyze photoluminescence (PL) and electroluminescence (EL) using a hyperspectral imager that records spectrally resolved luminescence images of solar cell absorbers. The system is calibrated to yield the luminescence flux in absolute values. This system enables to quantitatively image physical parameters such as the photovoltage with an uncertainty of less than 30mV. The wide field illumination, low power excitation and fast acquisition brings new insights compare to classical setups such as confocal microscope. Several types of absorbers have been analyzed. For instance, we can investigate spatial fluctuations of the Quasi Fermi Levels splitting in CIGS polycristalline absorbers and link those fluctuations to transport properties. The method is general to the point that third generation PV cells absorbers can also be evaluated. We illustrate the great potential of our setup by imaging quasi Fermi levels splitting in Intermediate Band Solar cells. Such techniques, directly evaluating the performance of photovoltaic absorbers and devices are needed for fast, high throughput investigations of combinatorial experiments such as the projects carried out for the material genomics programme.
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Acknowledgments
The authors are grateful to Y. Okada and M. Sugiyama of NextPV for the III-V samples and to LPN (S. Collin and JL Pelouard) for their help with CIGS μ-cells preparation.
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Guillemoles, JF., Delamarre, A., El-Hajje, G. et al. Characterization of Photovoltaic Absorbers for High Throughput Processing. MRS Online Proceedings Library 1709, 24–29 (2014). https://doi.org/10.1557/opl.2014.896
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DOI: https://doi.org/10.1557/opl.2014.896