Abstract
Grain boundaries (GBs) in polycrystalline silicon (poly-Si) thin film solar cells are frequently found to be detrimental for device performance. Biaxiallytextured silicon with grains that are well-aligned in-plane and out-of-plane can possess fewer GB defects. In this work, we use TCAD Sentaurus device simulator and known experimental work to investigate and quantify the potential performance gains of biaxially-textured silicon. Simulation shows there can be performance gain from well-aligned grains when GB defects dominate carrier recombination or when grains are small. On the other hand, when intra-grain defects dominate recombination and grains are large, well-aligned grains do not lead to much performance gain. Another important result from our simulation is when intra-grain and GB defects are few, Jsc is almost independent of grain size while Voc drops with decreasing grain size.
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Acknowledgments
Joel Bingrui Li thanks the National Research Foundation (NRF), Singapore for his Ph.D. Scholarship.
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Li, J.B., Clemens, B.M. Modeling the Performance of Biaxially-Textured Silicon Solar Cells. MRS Online Proceedings Library 1670, 36–44 (2014). https://doi.org/10.1557/opl.2014.590
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DOI: https://doi.org/10.1557/opl.2014.590