Abstract
Quantitative characterization of interface adhesion and fracture properties of thin film materials is of fundamental and technological interests in modern technologies. Sandwich beam specimens used in fracture mechanics techniques, such as four-point bending and double-cantilever beam have been widely adopted, including the semiconductor industry. In this work, we highlight some of the challenges that these techniques are facing in characterizing ever thinner films and tough interfaces, and propose a simple strategy to address these challenges by engineering the stack structure of the specimen. We show that crack propagation in a multilayer stack can be controlled using a super-layer (SL) structure, and the dependence of the cracking behavior on the thickness and mechanical properties of the SL is studied. The effectiveness of the SL strategy is demonstrated for a range of technologically important material systems used in the on-chip interconnects of modern microprocessors, which represents one promising path to extend the industry-standard techniques to meet future characterization needs.
Similar content being viewed by others
References
D. Ingerly, S. Agraharam, D. Becher, V. Chikarmane, K. Fischer, R. Grover, M. Goodner, S. Haight, J. He, T. Ibrahim, S. Joshi, H. Kothari, K. Lee, Y. Lin, C. Litteken, H. Liu, E. Mays, P. Moon, T. Mule, S. Nolen, N. Patel, S. Pradhan, J. Robinson, P. Ramanarayanan, S. Sattiraju, T. Schroeder, S. Williams, and P. Yashar: Low-k interconnect stack with thick metal 9 redistribution layer and Cu die bump for 45 nm high volume manufacturing. In International Interconnect Technology Conference, 2008. (IEEE, Burlingame, CA, 2008); p. 216.
D. Ingerly, A. Agrawal, R. Ascazubi, A. Blattner, M. Buehler, V. Chikarmane, B. Choudhury, F. Cinnor, C. Ege, C. Ganpule, T. Glassman, R. Grover, P. Hentges, J. Hicks, D. Jones, A. Kandas, H. Khan, N. Lazo, K.S. Lee, H. Liu, A. Madhavan, R. McFadden, T. Mule, D. Parsons, P. Parthangal, S. Rangaraj, D. Rao, J. Roesler, A. Schmitz, M. Sharma, J. Shin, Y. Shusterman, N. Speer, P. Tiwari, G. Wang, P. Yashar, and K. Mistry: Low-k interconnect stack with metal-insulator-metal capacitors for 22 nm high volume manufacturing. In IEEE International Interconnect Technology Conference (IITC), 2012. (IEEE, San Jose, CA 2012); p. 1.
R. Borkar, M. Bohr, and S. Jourdan: Advancing Moore’s Law in 2014 (Intel Corporation, 2014).
G. Wang, P.S. Ho, and S. Groothuis: Chip-packaging interaction: A critical concern for Cu/low k packaging. Microelectron. Reliab. 45(7–8), 1079 (2005).
C. Odegard, C. Tz-Cheng, C. Hartfield, and V. Sundararaman: Dielectric integrity test for flip-chip devices with Cu/low-k interconnects. In Proceedings of the 55th Electronic Components and Technology Conference, 2005. (IEEE, Lake Buena Vista, FL, 2005); p. 1163.
C.J. Zhai, U. Ozkan, A. Dubey, Sidharth, R.C. Blish, and R.N. Master: Investigation of Cu/low-k film delamination in flip chip packages. In Proceedings of the 56th Electronic Components and Technology Conference, 2006. (IEEE, San Diego, CA, 2006); 9 pp.
X.H. Liu, T.M. Shaw, M.W. Lane, E.G. Liniger, B.W. Herbst, and D.L. Questad: Chip-package-interaction modeling of ultra low-k/copper back end of line. In IEEE International Interconnect Technology Conference, 2007. (IEEE, Burlingame, CA, 2007); p. 13.
H. Li, T.M. Shaw, X-H. Liu, and G. Bonilla: Delayed mechanical failure of the under-bump interconnects by bump shearing. J. Appl. Phys. 111(8), 083503 (2012).
H. Li, T.Y. Tsui, and J.J. Vlassak: Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks. J. Appl. Phys. 106(3), 033503 (2009).
M. Lane, E. Liniger, and J. Lloyd: Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93(3), 1417 (2003).
Y. Zhou, T. Scherban, G. Xu, J. He, B. Miner, C.H. Jan, A. Ott, J. O’Loughlin, D. Ingerly, and J. Leu: Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects. In Advanced Metallization Conference (AMC). (Materials Research Society, Warrendale, PA, 2004); p. 189.
J.R. Greer and J.T.M. De Hosson: Plasticity in small-sized metallic systems: Intrinsic versus extrinsic size effect. Prog. Mater. Sci. 56(6), 654 (2011).
Z. Wu, Y-W. Zhang, M.H. Jhon, H. Gao, and D.J. Srolovitz: Nanowire failure: Long = brittle and short = ductile. Nano Lett. 12(2), 910 (2012).
O. Kraft, P.A. Gruber, R. Mönig, and D. Weygand: Plasticity in confined dimensions. Annu. Rev. Mater. Res. 40(1), 293 (2010).
M.D. Uchic, D.M. Dimiduk, J.N. Florando, and W.D. Nix: Sample dimensions influence strength and crystal plasticity. Science 305(5686), 986 (2004).
H. Hirakata, O. Nishijima, N. Fukuhara, T. Kondo, A. Yonezu, and K. Minoshima: Size effect on fracture toughness of freestanding copper nano-films. Mater. Sci. Eng., A 528(28), 8120 (2011).
H. Hosokawa, A.V. Desai, and M.A. Haque: Plane stress fracture toughness of freestanding nanoscale thin films. Thin Solid Films 516(18), 6444 (2008).
J.W. Hutchinson and Z. Suo: Mixed mode cracking in layered materials. Adv. Appl. Mech. 29, 63 (1991).
A. Evans and J. Hutchinson: The thermomechanical integrity of thin films and multilayers. Acta Metall. Mater. 43(7), 2507 (1995).
A. Volinsky, N. Moody, and W. Gerberich: Interfacial toughness measurements for thin films on substrates. Acta Mater. 50(3), 441 (2002).
A.A. Volinsky, N.R. Moody, and W.W. Gerberich: Superlayer residual stress effect on the indentation adhesion measurements. In MRS Proceedings, Vol. 594. (Materials Research Society, Warrendale, PA, 1999); p. 383.
A. Bagchi, G. Lucas, Z. Suo, and A. Evans: A new procedure for measuring the decohesion energy for thin ductile films on substrates. J. Mater. Res. 9(07), 1734 (1994).
R.P. Birringer, P.J. Chidester, and R.H. Dauskardt: High yield four-point bend thin film adhesion testing techniques. Eng. Fract. Mech. 78(12), 2390 (2011).
Q. Ma: A four-point bending technique for studying subcritical crack growth in thin films and at interfaces. J. Mater. Res. 12(03), 840 (1997).
H. Li, M.J. Kobrinsky, A. Shariq, J. Richards, J. Liu, and M. Kuhn: Controlled fracture of Cu/ultralow-k interconnects. Appl. Phys. Lett. 103(23), 231901–1–231901–5 (2013).
T. Scherban, G. Xu, C. Merrill, C. Litteken, and B. Sun: Fracture of low-k dielectric films and interfaces. In AIP Conference Proceedings, Vol. 817. (American Institute of Physics Publishing LLC, Dresden, Germany, 2006); 2006; p. 83.
M. Kanninen: An augmented double cantilever beam model for studying crack propagation and arrest. Int. J. Fract. 9(1), 83 (1973).
C.H. Hsueh, W.H. Tuan, and W.C.J. Wei: Analyses of steady-state interface fracture of elastic multilayered beams under four-point bending. Scr. Mater. 60(8), 721 (2009).
R. Dauskardt, M. Lane, Q. Ma, and N. Krishna: Adhesion and debonding of multi-layer thin film structures. Engineering Fracture Mechanics 61(1), 141 (1998).
H-H. Kausch and J.G. Williams: Fracture. In Encyclopedia of Polymer Science and Technology. (John Wiley & Sons, Inc., Hoboken, NJ, 2002).
M. Hauschildt, B. Hintze, M. Gall, F. Koschinsky, A. Preusse, T. Bolom, M. Nopper, A. Beyer, O. Aubel, and G. Talut: Advanced metallization concepts and impact on reliability. Jpn. J. Appl. Phys. 53(5S2), 05GA11 (2014).
C.J. Jezewski, J.S. Clarke, T.K. Indukuri, F. Gstrein, and D.J. Zierath: Cobalt Based Interconnects and Methods of Fabrication Thereof (Google Patents, Alexandria, VA, 2012).
C. Yang, F. Baumann, P-C. Wang, S. Lee, P. Ma, J. AuBuchon, and D. Edelstein: Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness. IEEE Electron Device Lett. 32(4), 560 (2011).
M.Y. He, A.G. Evans, and J.W. Hutchinson: Crack deflection at an interface between dissimilar elastic materials: Role of residual stresses. Int. J. Solids Struct. 31(24), 3443 (1994).
H. Ming-Yuan and J.W. Hutchinson: Crack deflection at an interface between dissimilar elastic materials. Int. J. Solids Struct. 25(9), 1053 (1989).
Z. Zhang and Z. Suo: Split singularities and the competition between crack penetration and debond at a bimaterial interface. Int. J. Solids Struct. 44(13), 4559 (2007).
S. Roham and T. Hight: Role of residual stress on crack penetration and deflection at a bimaterial interface in a 4-point bend test. Microelectron. Eng. 84(1), 72 (2007).
J. Hutchinson and A. Evans: Mechanics of materials: Top-down approaches to fracture. Acta Mater. 48(1), 125 (2000).
M. Lane, R.H. Dauskardt, A. Vainchtein, and H. Gao: Plasticity contributions to interface adhesion in thin-film interconnect structures. J. Mater. Res. 15(12), 2758 (2000).
ACKNOWLEDGMENTS
H.L. acknowledges Portland Technology Development of Intel Corporation for supporting test wafers. Special thanks go to Jimmy Liu of Intel Corporation for 4PB and DCB testing.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Li, H., Iqbal, A. & Brooks, J.D. Modulating crack propagation in a multilayer stack with a super-layer. Journal of Materials Research 30, 3065–3070 (2015). https://doi.org/10.1557/jmr.2015.252
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2015.252