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Design of Novel Deep Ultra-Violet ac-Driven Electroluminescence Devices Based on Boron Nitride nano-Materials

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Abstract

The hexagonal boron nitride (h-BN) as a wide bandgap semiconductor is an attractive material for deep ultraviolet (DUV) generation. In this paper we study the prospect of using the stacking hexagonal boron nitride nanosheets (h-BNNS) for generating DUV emission by impact excitation in alternating current driven thin electroluminescence devices (ACTEL) based on BN phosphors having different morphologies. A theoretical approach considered is based on the impact excitation model for generating DUV from stacking h-BNNS under a high electric field. It was found that in the h-BNNS with a thickness of 90 nm biased at 3.33×109 V/m, the quantum yield can reach to 86.8%, and the power conversion efficiency of 1.68%. To achieve the same quantum yield and power conversion efficiency for the ACTEL based on h-BN single crystal, the active phosphor layer should be 2 μm thick when biased at 1.5×108 V/m.

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Authors and Affiliations

  1. School of Electrical Engineering and Computer Science, Ohio University, Athens, OH 45701, USA

    W. Yuan, T. E. Wickramasinghe & W. M. Jadwisienczak

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  1. W. Yuan
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  2. T. E. Wickramasinghe
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  3. W. M. Jadwisienczak
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Yuan, W., Wickramasinghe, T.E. & Jadwisienczak, W.M. Design of Novel Deep Ultra-Violet ac-Driven Electroluminescence Devices Based on Boron Nitride nano-Materials. MRS Advances 5, 421–430 (2020). https://doi.org/10.1557/adv.2020.134

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