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MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

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Abstract

Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.

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Authors and Affiliations

  1. Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany

    Annika Grundmann, Michael Heuken, Holger Kalisch & Andrei Vescan

  2. AIXTRON Ltd., Anderson Road, Swavesey, Cambridge, CB24 4FQ, UK

    Clifford McAleese, Ben Richard Conran, Andrew Pakes & Kenneth Boh Khin Teo

  3. Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057, Duisburg, Germany

    Dominik Andrzejewski, Tilmar Kümmell & Gerd Bacher

  4. AIXTRON SE, Dornkaulstr. 2, 52134, Herzogenrath, Germany

    Michael Heuken

Authors
  1. Annika Grundmann
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  2. Clifford McAleese
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  3. Ben Richard Conran
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  4. Andrew Pakes
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  11. Andrei Vescan
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Grundmann, A., McAleese, C., Conran, B.R. et al. MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications. MRS Advances 5, 1625–1633 (2020). https://doi.org/10.1557/adv.2020.104

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