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TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology

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Abstract

A model of a High Voltage CMOS (HV-CMOS) Monolithic Active Pixel Sensor (MAPS) has been modelled using Technology Computer Aided Design (TCAD). The model has incorporated both the active region and the on-pixel readout circuits which were comprised of a source follower amplifier and an integrated charge amplifier. The simulation has examined the electrical characteristics and response output of a HV-CMOS MAPS sensor using typical dimensions, levels of doping in the structural layers and bias conditions for this sensor. The performance of two alternate designs of amplifier have been examined as a function of the operating parameters. The response of the sensor to the incidence of Minimum Ionizing Particles (MIPs) at different energies has been included in the model.

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Authors and Affiliations

  1. School of Engineering, RMIT University, VIC, 3000, Melbourne, Australia

    Tuan A. Bui, Geoffrey K. Reeves, Patrick W. Leech & Anthony W. Holland

  2. School of Physics, The University of Melbourne, VIC, 3010, Melbourne, Australia

    Geoffrey Taylor

Authors
  1. Tuan A. Bui
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  2. Geoffrey K. Reeves
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  3. Patrick W. Leech
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  4. Anthony W. Holland
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  5. Geoffrey Taylor
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Bui, T.A., Reeves, G.K., Leech, P.W. et al. TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology. MRS Advances 3, 3053–3059 (2018). https://doi.org/10.1557/adv.2018.417

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  • DOI: https://doi.org/10.1557/adv.2018.417

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