Skip to main content
Log in

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

  • Published:
MRS Advances Aims and scope Submit manuscript

Abstract

With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Y. Koide, M. Yokoba, A. Otsuki, F. Ako, T. Oku, M. Murakami, Diamond Relat. Mater. 6, 847 (1997).

    Article  CAS  Google Scholar 

  2. K. Das, V. Venkatesan, K. Miyata, D.L. Dreifus, J.T. Glass, Thin Solid Films 212, 19 (1992).

    Article  CAS  Google Scholar 

  3. A. Traoré, P. Muret, A. Fiori, D. Eon, E. Gheeraert, J. Pernot, Appl. Phys. Lett. 104, 052105 (2014).

  4. S.R. Shatynski, Oxid Met. 13, 105 (1979).

  5. J.H. Klootwijk, C.E. Timmering, Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs, Proc. 2004 Int. Conf. Microelectron. Test Struct. 17, 8 (2004).

  6. V. Mortet, Z. Vlčková Živcová, A. Taylor, O. Frank, P. Hubík, M. Davydova D. Trémouilles, F. Jomar, J. Barjon, L. Kavan, Refined analysis of boron doped diamond Raman spectrum. 28th International Conference on Diamond and Carbon Materials, Gothia Towers, Gothenburg, Sweden.

  7. V. Mortet, J. Pernot, F. Jomard, A. Soltani, Z. Remes, J. Barjon, J. D’Haen, K. Haenen, Diamond Relat. Mater. 53, 29 (2015).

  8. C. Johnston, P.R. Chalker, I.M. Buckley-Golder, M. van Rossum, M. Werner, E. Obermeier, Mater Sci Eng B. 29, 206 (1995).

    Article  Google Scholar 

  9. J. Nakanishi, A. Otsuki, T. Oku, O. Ishiwata, M. Murakami, J. Appl. Phys. 76, 2293 (1994).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mortet, V., Taylor, A., Davydova, M. et al. Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond. MRS Advances 3, 1931–1935 (2018). https://doi.org/10.1557/adv.2018.39

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/adv.2018.39

Navigation