Abstract
We determined that the conduction band offset (CBO) and the valence band offset (VBO) at the CdS/ Cu2ZnSnSe4 (CZTSe) heterointerface are +0.56 and +0.89eV, respectively, by using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and inversed photoemission spectroscopy (IPES). A positive CBO value, so-called “spike” structure, means that the position of conduction band becomes higher than that of absorber layer. The evaluated CBO of +0.56 eV suggests that the conduction band alignment at CdS/CZTSe interface is enough to become an electron barrier. Despite such a large spike structure in the conduction band at the interface, a conversion efficiency of 8.7 % could be obtained for the CdS/CZTSe heterojunction solar cells.
Similar content being viewed by others
References
H. Katagiri, K. Jimbo, W. S. Maw, K. Oishi, M. Yamazaki, and A. Takeuchi, Thin Solid Films517, 2455 (2009)
T. K. Todorov, K. B. Reuter and D. B. Mitzi, Adv. Mater.22, E156 (2010)
W. Wang, M. T. Winkler, O. Gunawan, T. Gokmen, T. K. Todorov, Y. Zhu, and D. B. Mitzi, Adv. Energy Mater.4, 1301465 (2014).
K. M. Kim, K. H. Liao, H. Tampo, H. Shibata, and S. Niki, Appl. Phys. Express8, 042301 (2015)
K. M. Kim, S. Kim, H. Tampo, H. Shibata, K. Matsubara, and S. Niki, Mater. Lett.78–82, 176 (2016)
I. Repins, C. Beall, N. Vora, C. Dehart, D. Kuciauskas, P. Dippo, B. To, J. Mann, W.-C. Hsu, A. Goodrich, and R. Noufi, Sol. Energy Mater. Sol. Cells101, 154 (2012)
S. Y. Chen, X. G. Gong, A. Walsh, and S. H. Wei, Appl. Phys. Lett.94, 041903 (2009).
P. M. P. Salomé, J. Malaquias, P. A. Fernandes, M. S. Ferreira, A. F. da Cunha, J. P. Leitão, J. C. González, and F. M. Matinaga, Sol. Energy Mater. Sol. Cells101, 147 (2012)
T. Minemoto, T. Matsui, H. Takakura, Y. Hamakawa, T. Negami, Y. Hashimoto, T. Uenoyama, and M. Kitagawa, Sol. Energy Mater. Sol. Cells67, 83 (2001)
M. Gloeckler and J. R. Sites, Thin Solid Films480–481, 241 (2005)
N. Terada, H. Morita, K. Chochi, S. Yoshimoto, M. Mitsunaga, S. Ishizuka, H. Shibata, A. Yamada, K. Matsubara, and S. Niki, Jpn. J. Appl. Phys.53, 05FW09 (2014)
J. Paier, R. Asahi, A. Nagoya, and G. Kresse, Phys. Rev. B79, 115126 (2009)
S. Chen, A. Waish, J.-W. Yang, X.-G. Gong, L. Sun, P.-X. Yang, J.-H. Chu, and S.-W. Wei, Phys. Rev. B83, 125201 (2011)
M. Bär, B.-A. Schubert, B. Marsen, R. G. Wilks, S. Pookpanratana, M. Blum, S. Krause, T. Unold, W. Yang, L. Weinhardt, C. Heske, and H. -W. Schock, Appl. Phys. Lett.99, 222105 (2011).
R. Haigtht, A. Barkhouse, O. Gunawan, B. Shin, M. Copel, M. Hopstaken, and D. B. Mitzi, Appl. Phys. Lett.98, 253502 (2011).
N. Terada, S. Yoshimoto, K. Chochi, T. Fukuyama, M. Mitsunaga, H. Tampo, H. Shibata, K. Matsubara, S. Niki, N. Sakai, T. Katou, and H. Sugimoto, Thin Solid Films583, 166 (2015)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Nagai, T., Kim, S., Tampo, H. et al. Band Alignment of CdS/Cu2ZnSnSe4 Heterointerface and Solar Cell Performances. MRS Advances 2, 3157–3162 (2017). https://doi.org/10.1557/adv.2017.315
Published:
Issue Date:
DOI: https://doi.org/10.1557/adv.2017.315