Skip to main content
Log in

Effects of external fields on the nonlinear optical properties of an n-type quadruple δ-doped GaAs quantum wells

  • Regular Article
  • Published:
The European Physical Journal Plus Aims and scope Submit manuscript

Abstract

Linear, third-order, total optical absorption and relative refractive index change coefficients are investigated for an n-type \(\delta \)-doped GaAs/Al\({_x}\)Ga\(_{1-x}\)As quadruple quantum well with electric, magnetic as well as laser fields as external probes. The Hamiltonian operator of the quaternary \(\delta \)-doped well is written with the inclusion of laser dressed potential term and electric, magnetic field energy operators, in order to obtain the electronic spectrum. Optical properties are calculated by obtained electronic states within the framework of compact density matrix approach. The results show that, in the presence of external electric, magnetic and intense laser fields, the evaluated optical coefficients exhibit similar shifting characteristic with different peak magnitude variations. These findings in the optical properties of quadruple \(\delta \)-doped quantum wells in the presence of external fields may provide guidance to the practical studies.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. D.S. Chemla, D.A.B. Miller, P.W. Smith, Nonlinear optical properties of multiple quantum well structures for optical signal processing. Semicond. Semimet. 24, 279–318 (1987)

    Article  Google Scholar 

  2. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, N. Grandjean, Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. J. Cryst. Growth 262, 145–150 (2004)

    Article  ADS  Google Scholar 

  3. L.N. Pandey, T.F. George, M.L. Rustgi, Intersubband transitions in an asymmetric quantum well with a thin barrier or a delta-function potential. J. Appl. Phys. 68, 1933–1936 (1990)

    Article  ADS  Google Scholar 

  4. E.F. Schubert, Delta doping of III-V compound semiconductors: fundamentals and device applications. J. Vac. Sci. Technol. 8, 2980–2996 (1990)

    Article  ADS  Google Scholar 

  5. Y.C. Shih, B.G. Streetman, Modulation of carrier distributions in delta-doped quantum wells. Appl. Phys. Lett. 59, 1344–1346 (1991)

    Article  ADS  Google Scholar 

  6. X. Zheng, T.K. Carns, K.L. Wang, B. Wu, Electron mobility enhancement from coupled wells in delta-doped GaAs. Appl. Phys. Lett. 62, 504–506 (1993)

    Article  ADS  Google Scholar 

  7. T. Sahu, S. Palo, A.K. Panda, Enhancement of multisubband electron mobility in parabolic Al\(_x\)Ga\(_{1-x}\)As-GaAs double quantum well structures. J. Appl. Phys. 113(083704), 1–9 (2013)

    Google Scholar 

  8. S. Das, R.K. Nayak, T. Sahu, A.K. Panda, Enhancement of electron mobility in asymmetric coupled quantum well structures. J. Appl. Phys. 115(073701), 1–8 (2014)

    Google Scholar 

  9. M. Daoudi, I. Dhifallah, A. Ouerghi, R. Chtourou, Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures. Superlattices Microstruct. 51, 497–505 (2012)

    Article  ADS  Google Scholar 

  10. C. Tang, J. Shi, Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications. Physica E 69, 96–100 (2015)

    Article  ADS  Google Scholar 

  11. Y. Kozuka, M. Kim, H. Ohta, Y. Hikita, C. Bell, H.Y. Hwang, Enhancing the electron mobility via delta-doping in SrTiO3. Appl. Phys. Lett. 97(222115), 1–3 (2010)

    Google Scholar 

  12. S. Das, M. Mohapatra, R.K. Nayak, A.K. Panda, T. Sahu, Improved two-dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures. Jpn. J. Appl. Phys. 56, 034001 (2017)

    Article  ADS  Google Scholar 

  13. C.R. Lutz, J. Kanaley, K.M. Lau, Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures. J. Electron. Mater. 29, 225–230 (2000)

    Article  ADS  Google Scholar 

  14. D.-F. Liu, J.-G. Jiang, Y. Cheng, J.-F. He, Effect of delta doping on mid-infrared intersubband absorption in AlGaN/GaN step quantum well structures. Physica E 54, 253–256 (2013)

    Article  ADS  Google Scholar 

  15. F. Guillot, B. Amstatt, E. Bellet-Amalric, E. Monroy, L. Nevou, L. Doyennette, F.H. Julien, L.S. Dang, Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths. Superlattices Microstruct. 40, 306–312 (2006)

    Article  ADS  Google Scholar 

  16. V.L. Gurtovoi, V.V. Valyaev, SYu. Shapoval, A.N. Pustovit, Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 72, 1202–1204 (1998)

    Article  ADS  Google Scholar 

  17. V. Tulupenko, C.A. Duque, V. Akimov, R. Demediuk, V. Belykh, A. Tiutiunnyk, A.L. Morales, R.L. Restrepo, M.E. Mora-Ramos, O. Fomina, On intersubband absorption of radiation in delta-doped QWs. Physica E 74, 400–406 (2015)

    Article  ADS  Google Scholar 

  18. E. Ozturk, Y. Ergun, H. Sari, I. Sokmen, Electronic subband of single Si \(delta\)-doped GaAs structures. Superlattices Microstruct. 28, 35–45 (2000)

    Article  ADS  Google Scholar 

  19. E. Ozturk, Y. Ergun, H. Sari, I. Sokmen, Si delta-doped GaAs structure with different dopant distribution models. J. Appl. Phys. 91, 2118–2122 (2002)

    Article  ADS  Google Scholar 

  20. M.J. Kao, W.C. Hsu, R.T. Hsu, Y.H. Wu, T.Y. Lin, Characteristics of graded-like multiple-delta-doped GaAs field effect transistors. Appl. Phys. Lett. 66, 2505–2506 (1995)

    Article  ADS  Google Scholar 

  21. T. Kobayashi, T. Ariki, M. Iwabuchi, T. Maki, S. Shikama, S. Suzuki, Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement. J. Appl. Phys. 76, 1977–1979 (1994)

    Article  ADS  Google Scholar 

  22. H. Dakhlaoui, M. Nefzi, Tuning the linear and nonlinear optical properties in double and triple doped GaAs semiconductor: impact of electric and magnetic fields. Superlattices Microstruct. 136(106292), 1–14 (2019)

    Google Scholar 

  23. H. Sari, U. Yesilgul, F. Ungan, S. Sakiroglu, E. Kasapoglu, I. Sökmen, Intense laser field effects on the intersubband optical absorption and refractive index change in the \(delta\)-doped GaAs quantum wells. Chem. Phys. 487, 11–15 (2017)

    Article  MATH  Google Scholar 

  24. E. Kasapoglu, U. Yesilgul, F. Ungan, I. Sokmen, H. Sari, The effect of the intense laser field on the electronic states and optical properties of n-type double \(delta\)-doped GaAs quantum wells. Opt. Mater. 64, 82–87 (2017)

    Article  ADS  MATH  Google Scholar 

  25. J.C. Martinez-Orozco, K.A. Rodriguez-Magdaleno, J.R. Suarez-Lopez, C.A. Duque, R.L. Restrepo, Absorption coefficient and relative refractive index change for a double \(\delta \)-doped GaAs MIGFET-like structure: electric and magnetic field effects. Superlattices Microstruct. 92, 166–173 (2016)

    Article  ADS  Google Scholar 

  26. K.A. Rodriguez-Magdaleno, J.C. Martínez-Orozco, I. Rodriguez-Vargas, M.E. Mora-Ramos, C.A. Duque, Asymmetric GaAs n-type double \(delta\)-doped quantum wells as a source of intersubband-related nonlinear optical response: effects of an applied electric field. J. Lumin. 147, 77–84 (2014)

    Article  Google Scholar 

  27. H. Sari, F. Ungan, S. Sakiroglu, U. Yesilgul, I. Sökmen, The effects of intense laser field on optical responses of n-type delta doped GaAs quantum well under applied electric and magnetic fields. Optik 162, 76–80 (2018)

    Article  ADS  Google Scholar 

  28. H. Sari, E. Kasapoglu, S. Sakiroglu, U. Yesilgul, F. Ungan, I. Sökmen, Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double \(delta\)-doped GaAs quantum well. Physica E 90, 214–217 (2017)

    Article  ADS  MATH  Google Scholar 

  29. R.L. Restrepo, L.F. Castano-Vanegas, J.C. Martínez-Orozco, A.L. Morales, C.A. Duque, Mid-Infrared linear optical transitions in \(delta\)-doped AlGaAs/GaAs triple-quantum well. Appl. Phys. A 125(31), 1–5 (2019)

    ADS  Google Scholar 

  30. F. Ungan, M.E. Mora-Ramos, E. Kasapoglu, H. Sari, I. Sökmen, Electron-related optical responses in triple \(delta\)-doped quantum wells. Phil. Mag. 99, 644–658 (2018)

    Article  ADS  Google Scholar 

  31. F. Ungan, S. Pal, M.K. Bahar, M.E. Mora-Ramos, Computation of the nonlinear optical properties of n-type asymmetric triple \(delta\)-doped GaAs quantum well. Superlattices Microstruct. 130, 76–86 (2019)

    Article  ADS  Google Scholar 

  32. F. Ungan, M.E. Mora-Ramos, E. Kasapoglu, H. Sari, I. Sökmen, Nonlinear optical properties of triple \(delta\)-doped quantum wells: the impact of the applied external fields. Optik 180, 387–393 (2019)

    Article  ADS  Google Scholar 

  33. Q. Dai, M.F. Schubert, M.H. Kim, J.K. Kim, E.F. Schubert, D.D. Koleske, M.H. Crawford, S.R. Lee, A.J. Fischer, G. Thaler, M.A. Banas, Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities. Appl. Phys. Lett. 94(111109), 1–3 (2009)

    Google Scholar 

  34. M. Solaimani, I. Morteza, H. Arabshahi, S.M. Reza, Study of optical non-linear properties of a constant total effective length multiple quantum wells system. J. Lumin. 134, 699–705 (2013)

    Article  Google Scholar 

  35. S. Baskoutas, C. Garoufalis, A.F. Terzis, Linear and nonlinear optical absorption coefficients in inverse parabolic quantum wells under static external electric field. Eur. Phys. J. B 84, 241–247 (2011)

    Article  ADS  Google Scholar 

  36. H. Dakhlaoui, Tunability of the optical absorption and refractive index changes in step-like and parabolic quantum wells under external electric field. Optik 168, 416–423 (2018)

    Article  ADS  Google Scholar 

  37. H. Dakhlaoui, F. Ungan, J.C. Martínez-Orozco, M.E. Mora-Ramos, Theoretical investigation of linear and nonlinear optical properties in an heterostructure based on triple parabolic barriers: Effects of external fields. Phys. B 607(412782), 1–7 (2021)

    Google Scholar 

  38. L. Ioriatti, Thomas-Fermi theory of \(\delta \)-doped semiconductor structures: Exact analytical results in the high-density limit. Phys. Rev. B 41, 8340–8344 (1990)

    Article  ADS  Google Scholar 

  39. H. Noverola-Gamas, L.M. Gaggero-Sager, O. Oubram, Model of n-type quadruple \(delta\)-doped GaAs quantum wells. Eur. Phys. J. B 93(18), 1–5 (2020)

    Google Scholar 

  40. J.C. Martínez-Orozco, J.G. Rojas-Briseno, K.A. Rodríguez-Magdaleno, I. Rodríguez-Vargas, M.E. Mora-Ramos, R.L. Restrepo, F. Ungan, E. Kasapoglu, C.A. Duque, Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double delta-doped GaAs quantum wells. Phys. B 525, 30–35 (2017)

    Article  ADS  Google Scholar 

  41. R.L. Restrepo, A.L. Morales, J.C. Martínez-Orozco, H.M. Baghramyan, M.G. Barseghyan, M.E. Mora-Ramos, C.A. Duque, Impurity-related nonlinear optical properties in delta-doped quantum rings: electric field effects. Phys. B: Phys. Condens. Matter 453, 140–145 (2014)

    Article  ADS  Google Scholar 

  42. J.-B. Xia, W.-J. Fan, Electronic structures of superlattices under in-plane magnetic field. Phys. Rev. B 40, 8508–8515 (1989)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Aysevil Salman Durmuslar.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Salman Durmuslar, A., Dakhlaoui, H., Mora-Ramos, M.E. et al. Effects of external fields on the nonlinear optical properties of an n-type quadruple δ-doped GaAs quantum wells. Eur. Phys. J. Plus 137, 730 (2022). https://doi.org/10.1140/epjp/s13360-022-02938-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1140/epjp/s13360-022-02938-7

Navigation