Abstract
The porous silicon structures can effectively trap light by virtue of the large number of pore on its surface. Therefore, it is widely used in the fields of optical applications such as photoelectric conversion, photon collection and detection. A microporous silicon with an ultra-high antireflection performance was fabricated by using electrochemical etching based on the inrush current model. The results show that the porous silicon structure had a smaller pore size range, and the reflectivity of the porous silicon was reduced to 2.27% under light radiation with a wave length of 300–1000 nm. The surface reflectivity of porous silicon structure with different pore diameters and different aspect ratios was investigated by using the finite-difference time-domain method to reveal the antireflective mechanism. The porous silicon structure with high surface quality, high pore integrity, pore diameter distribution of 300–700 nm and the aspect ratio of the pore exceeds 4 was found to be beneficial in achieving lower reflectivity in the range of incident light wavelength from 300 to 1000 nm, which is useful for designing porous silicon antireflective material.
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This manuscript has no associated data or the data will not be deposited. [Authors' comment: Details of all experiments have been stated in the experimental section and all data have been presented in the paper figures. If you need first-hand data from us, you can contact the corresponding author.]
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Funding
This work was supported by grants from Natural Science Foundation of Jiangsu Province (BK20180098), National Laboratory of Solid State Microstructures, Nanjing University (M32045, M33042).
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Daohan Ge and Zhou Hu contributed to experiments and analysis of their results. Zhiwei Fang, Chao Ni, Liqiang Zhang, and Shining Zhu contributed to calculations and analysis of the results. All authors participated in the discussion of results and preparation of the manuscript.
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Ge, D., Hu, Z., Fang, Z. et al. Optimization of porous silicon structure as antireflective material. Eur. Phys. J. D 76, 27 (2022). https://doi.org/10.1140/epjd/s10053-022-00344-3
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DOI: https://doi.org/10.1140/epjd/s10053-022-00344-3