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Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

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Abstract

We investigate the transport properties of double-barrier resonant tunneling diodes based on silicene nanoribbons by means of transfer matrix method under the external electric field. It is found that the transmission shows resonance suppression (enhancement) under the positive (negative) bias. The spin-dependent and valley-dependent negative differential resistance (NDR) characteristics are found both in the symmetric and asymmetric structures. The influence of various factors on the I-V characteristics is analyzed, it is found that the NDR characteristics can be greatly enhanced by the structural parameters, Fermi energy, and band gap. What should be laid stress on is that the maximum peak-to-valley ratio (PVR) can reach up to 13 by regulating the band gap. Proposed structure here could be the base of other high-frequency electronics devices.

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Authors and Affiliations

  1. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, P.R. China

    Dan-Na Liu & Yong Guo

  2. Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China

    Yong Guo

  3. Microsystem and Terahertz Research Center and Institute of Electronic Engineering, China Academy of Engineering Physics, Chengdu, 610200, P.R. China

    Yu Song

Authors
  1. Dan-Na Liu
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  2. Yong Guo
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  3. Yu Song
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Correspondence to Yong Guo.

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Liu, DN., Guo, Y. & Song, Y. Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes. Eur. Phys. J. B 93, 188 (2020). https://doi.org/10.1140/epjb/e2020-10326-8

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