Skip to main content
SpringerLink
Log in

Siloxane Composition for the Passivation of p–n Junctions of High-Voltage Semiconductor Devices

  • Published:
Polymer Science, Series D Aims and scope Submit manuscript

Abstract

A one-component organosilicon composition based on purified polydimethylboronzirconosiloxane and a curing system including a tributylphosphate and boron-oxide-adduct solution in triethoxysilane was developed. It was shown that the developed composition, which was called the KAE sublayer, can be recommended for the passivation of p–n junctions of high-voltage semiconductor devices operated under the conditions of the effect of increased temperatures, electric voltages, and humidity.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P. S. Agalarzade, A. I. Petrin, and S. O. Izidinov, Foundations of Designing and Technology of Processing of p?n-Transition Surface (Sovetskoe Radio, Moscow, 1978) [in Russian].

    Google Scholar 

  2. RMP 028.003-81: Materials for Protection of p–n-Transitions of Semiconductor Devices and Integrated Circuits (Elektronstandart All-Russian Scientific Research Inst., Moscow, 1982) [in Russian].

  3. GOST (State Standard) R 090.003-83: Integrated Microcircuits and Semiconductor Devices. Organic Materials for Application in Technological Processes of Assembling. List. Requirements to Technical Characteristics. Application Conditions (Moscow, 1983) [in Russian].

  4. Catalogue of Corning Dow Company. http://www.dowcorning.com/content/electronics/.

  5. TU YUO (Specifications) 029.066 TU: Underlayers of KA Trademark.

  6. O. V. Neelova, “High-purity organosilicon filling compounds meant for electronics,” Izv. Vyssh. Uchebn. Zaved., Khim. Khim. Tekhnol. 50 (11), 78–81 (2007).

    CAS  Google Scholar 

  7. O. V. Neelova, “Organosilicon composition for protection of articles of electronics with increased adhesion properties and thermo- and frost resistance of coatings,” Izv. Vyssh. Uchebn. Zaved., Khim. Khim. Tekhnol. 57 (9), 86–92 (2014).

    CAS  Google Scholar 

  8. O. V. Neelova, Organosilicone Composition for Protection of SHF-Articles of Electronics (LAP LAMBERT Academic, Saarbrüken, 2016).

    Google Scholar 

  9. O. V. Neelova and R. A. Gazzaeva, “Polysiloxane composite for glueing glass with metal,” Polym. Sci., Ser. D 9, 255–259 (2016).

    Article  CAS  Google Scholar 

  10. O. V. Neelova and R. A. Gazzaeva, “A curing system for polyorganosiloxane compositions,” Polym. Sci., Ser. D 11, 50–55 (2018).

    Article  CAS  Google Scholar 

  11. O. V. Neelova and R. A. Gazzaeva, “The chemical analysis of the silicone polymers and materials on their basis, applied in micro- and nanoelectronics,” Butlerovskie Soobshch. 42 (5), 112–118 (2015).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. North Ossetian State University, Vladikavkaz, 362025, Russia

    O. V. Neelova

Authors
  1. O. V. Neelova
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to O. V. Neelova.

Additional information

Original Russian Text © O.V. Neelova, 2017, published in Klei, Germetiki, Tekhnologii, 2017, No. 11, pp. 10–16.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Neelova, O.V. Siloxane Composition for the Passivation of p–n Junctions of High-Voltage Semiconductor Devices. Polym. Sci. Ser. D 11, 159–164 (2018). https://doi.org/10.1134/S1995421218020120

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1995421218020120

Keywords

Search

Navigation