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Electrophysical and Photoelectric Properties of Poly-3-Hexylthiophene Modified with Silicon Nanoparticles

  • POLYMER, BIOORGANIC, AND HYBRID NANOMATERIALS
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Abstract

This work is devoted to the determination of the mechanisms of generation, transfer, and recombination of charge carriers in a hybrid organic–inorganic system—a polymer poly-3-hexylthiophene with silicon nanoparticles (nc-Si). It is shown that by varying the nc-Si concentration, it is possible to change the conductivity and photoconductivity of such a system within a fairly wide range, achieving optimal values for applications in optoelectronics (photodetectors, solar cells, etc.). A model is proposed making it possible to describe the photoelectric properties of poly-3-hexylthiophene modified with nc-Si from a single point of view. The model assumes a Gaussian distribution of the density of electronic states along which the hopping transport of charge carriers occurs. The influence of nc-Si mainly affects the parameters of the Gaussian distribution of the density of electronic states and the position of the Fermi level.

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ACKNOWLEDGMENTS

The equipment of the Educational and Methodological Center for Lithography and Microscopy of Moscow State University was used in the work.

Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-29-23005.

Author information

Authors and Affiliations

  1. Faculty of Physics, Moscow State University, 119991, Moscow, Russia

    K. Savin, P. Forsh, A. Kazanskiy, D. Presnov, V. Kulbachinskii & P. Kaskarov

  2. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    K. Savin

  3. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    P. Forsh & P. Kaskarov

  4. Prokhorov General Physics Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    D. Amasev

  5. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, 119071, Moscow, Russia

    A. Tameev & M. Tedoradze

  6. Skobel’tsyn Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia

    D. Presnov

  7. Quantum Technology Centre, Moscow State University, 119991, Moscow, Russia

    D. Presnov

  8. Moscow Automobile and Road Construction State Technical University, 125319, Moscow, Russia

    E. Forsh

Authors
  1. K. Savin
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  2. P. Forsh
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  3. A. Kazanskiy
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  4. D. Amasev
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  5. A. Tameev
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  6. M. Tedoradze
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  7. D. Presnov
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  8. E. Forsh
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  9. V. Kulbachinskii
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  10. P. Kaskarov
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Corresponding author

Correspondence to K. Savin.

Additional information

Translated by V. Kudrinskaya

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Savin, K., Forsh, P., Kazanskiy, A. et al. Electrophysical and Photoelectric Properties of Poly-3-Hexylthiophene Modified with Silicon Nanoparticles. Nanotechnol Russia 15, 770–777 (2020). https://doi.org/10.1134/S1995078020060178

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  • DOI: https://doi.org/10.1134/S1995078020060178

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