Abstract
Results of studies of the effect of the discharge current on the crystalline structure, surface morphology, and thickness of thin AlN coatings deposited by reactive dual magnetron sputtering on c-axis oriented sapphire wafers have been described. Using grazing incidence X-ray diffraction, it has been determined that the coatings have a wurtzite crystalline structure and at least two types of grains with different orientations of the (002) planes. Electron microscopy has revealed that the coatings are composed of vertically aligned columnar grains and a nucleation layer. The grains are uniformly distributed over the substrate surface; each of the grains consists of smaller crystallites. It has been found that the discharge current largely affects the concentration of grains of different orientations and has hardly any effect on the size of the nuclei.
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Kh. Sh. Kaltaev, N. S. Sidel’nikova, S. V. Nizhankovskii, A. Ya. Dan’ko, M. A. Rom, P. V. Mateichenko, M. V. Dobrotvorskaya, and A. T. Budnikov, “Fabrication, treatment, and testing of materials and structures obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire,” Semiconductors 43, 1606 (2009).
A. F. Belyanen, M. I. Samoelovich, and V. D. Zhitkovsky, “Impact-resistant protective film coatings based on AlN in electronic engineering,” Technol. Des. Electron. Equip. 5, 35–41 (2005).
R. A. Cherkasov, S. V. Zaitsev, V. S. Vashchilin, D. S. Prokhorenkov, V. M. Narziev, and E. I. Yevtushenko, “Structural properties of thin films of AlN, grown on glass by quadrupole magnetron sputtering,” in Science and Education, Proceedings of the 6th International Research and Practice Conference, Munich, June 26–27, 2014 (Vela Verlag Waldkraiburg, Munich, 2014), pp. 452–458.
M. Yu. Dvoesherstov, V. I. Cherednik, A. V. Belyaev, A. V. Denisova, and A. P. Sidorin, “Heteroepitaxial Structures AlN/Al2O3 and GaN/Al2O3 for acousical electronic microwave devices,” Sovrem. Naukoemk. Tekhnol., No. 9, 24–30 (2010).
A. F. Belyanin, M. I. Samoilovich, V. D. Zhitkovskii, and A. L. Kameneva, “Impact resistant protective film coatings based on AlN in electronics,” Tekhnol. Konstrukts. Elektron. Appar., No. 5, 35–41 (2005).
A. F. Belyanin, V. D. Zhitkovskii, and P. V. Pashchenko, “Aluminium nitride films: production, structure and application in electron engineering devices,” Sist. Sredstvo Svyazi, Televid. Radioveshch., No. 1, 29–37 (1998).
V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, S. N. Svitasheva, K. S. Zhuravlev, Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz, “AlN growth on sapphire substrate by ammonia MBE,” J. Cryst. Growth 300, 145–150 (2007).
C. Ristoscu, C. Ducu, G. Socol, F. Craciunoiu, and I. N. Mihailescu, “Structural and optical characterization of AlN films grown by pulsed laser deposition,” Appl. Surf. Sci. 248 (1–4), 411–415 (2005).
A. Claudel, E. Blanquet, D. Chaussende, R. Boichot, B. Doisneau, G. Berthomé, A. Crisci, H. Mank, C. Moisson, D. Pique, and M. Pons, “Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process,” J. Cryst. Growth 335 (1), 17–24 (2011).
S. Uchiyama, Y. Ishigami, M. Ohta, M. Niigaki, H. Kan, Y. Nakanishi, and T. Yamaguchi, “Growth of AlN films by magnetron sputtering,” J. Cryst. Growth 189–190, 448–451 (1998).
D. Manova and J. W. Gerlach, and S. Mändl, “Thin film deposition using energetic ions,” Materials, No. 3, 4109–4141 (2010).
E. I. Evtushenko, V. A. Doroganov, V. M. Nartsev, I. Yu. Moreva, S. V. Zaitsev, and S. Yu. Kolomytseva, “Modification of refractory ceramic composites with coatings based on compounds of titanium and zirconium,” Refract. Ind. Ceram. 52, 272–277 (2011).
V. M. Nartsev, M. S. Ageeva, D. S. Prokhorenkov, S. V. Zaitsev, S. V. Karatsupa, and V. S. Vashchilin, “Influence of deposition conditions of high-quality AlN and SiC on the coating characteristics,” Vestn. Belgor. Tekhnol. Univ. V.G. Shukhova, No. 6, 168–172 (2013).
S. V. Zaitsev, V. S. Vashchilin, D. S. Prokhorenkov, V. M. Nartsev, and E. I. Evtushenko, “Synthesis of AlN films using vacuum-plasma technologies,” Ogneupory Tekh. Keram., No. 7–8, 15–18 (2014).
E. V. Berlin and L. A. Seidman, Preparation of Thin Films by Reactive Magnetron Sputtering (Tekhnosfera, Moscow, 2014) [in Russian].
A. Vir Singh, S. Chandra, and G. Bose, “Deposition and characterization of c-axis oriented aluminum nitride films by radio frequency magnetron sputtering without external substrate heating,” Thin Solid Films 519, 5846–5853 (2011).
S. V. Zaitsev, V. S. Vashchilin, D. S. Prokhorenkov, V. M. Nartsev, and E. I. Evtushenko, “Growth and microstructure of AlN films formed by quadrupole magnetron spraying method,” Ogneupory Tekh. Keram., No. 10, 13–16 (2014).
Science and Technology of Thin Films, Ed. by F. C. Matacotta and G. Ottaviani (World Scientific, Singapore, 1995).
K. Wasa and S. Hayakawa, Handbook of Sputter Deposition Technology. Principles, Technology and Application (Noyes Publ., Westwood, 1992).
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Original Russian Text © S.V. Zaitsev, V.M. Nartsev, V.S. Vashchilin, D.S. Prokhorenkov, E.I. Evtushenko, 2016, published in Rossiiskie Nanotekhnologii, 2016, Vol. 11, Nos. 5–6.
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Zaitsev, S.V., Nartsev, V.M., Vashchilin, V.S. et al. Microstructure and surface morphology of thin AlN films formed on sapphire by dual magnetron sputtering. Nanotechnol Russia 11, 280–286 (2016). https://doi.org/10.1134/S1995078016030186
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DOI: https://doi.org/10.1134/S1995078016030186