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Advanced Architecture of a CdHgTe Photodiode for Detection of Weak Infrared Radiation

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Abstract

Dark currents in advanced architecture of a photodiode matrix based on a CdHgTe ternary compound designed to record weak infrared radiation are analyzed. The formation of regions of opposite conductivity in the wide-gap layer reduces the contribution of Shockley–Reed–Hall generation–recombination currents, thus increasing the influence of Auger mechanisms that determine the current of diffusion. Using areas of different composition with transition sublayers with a reduced surface recombination rate at the interface, it is possible to reduce the contribution of surface mechanisms to the total dark current of the photodiode. Due to the correct choice of the composition of the absorption region and the upper wide-gap layer in the advanced PSE architecture, it is possible to achieve a decrease of the dark current, and therefore, to improve the photovoltaic parameters.

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Authors and Affiliations

  1. JSC Scientific and Production Association Orion, 111538, Moscow, Russia

    N. I. Iakovleva

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  1. N. I. Iakovleva
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Correspondence to N. I. Iakovleva.

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Translated by S. Rostovtseva

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Iakovleva, N.I. Advanced Architecture of a CdHgTe Photodiode for Detection of Weak Infrared Radiation. J. Commun. Technol. Electron. 67, 329–334 (2022). https://doi.org/10.1134/S1064226922030184

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  • DOI: https://doi.org/10.1134/S1064226922030184

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