Abstract
A magnetic system is developed to generate a stationary uniform magnetic field in a relatively large region between the poles of a magnet that is used in a setup for the study of characteristics of spin waves. The calculations and subsequent measurements show that the application of ring terminals with certain parameters in the magnet allows a several-fold increase in the size of the region with a high uniformity of the magnetic field. The Fourier analysis of the distribution of the amplitude of spin waves is used to show that improvement of the uniformity of the magnetic field in the system due to the application of the ring terminals leads to a several-fold increase in the accuracy of measurement of the wave number. It is found that the first mode of the backward volume spin wave is split into satellite modes that are excited in the ferrite film due to the presence of several layers with similar magnetic parameters.
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Notes
With respect to the calculation algorithm, we consider a nonlinear problem that must be self-consistently solved, since the magnetization of a soft magnetic material leads to sequential changes of magnetization at each point of the material in accordance with the nonlinear magnetization curve. The magnetization forms a new distribution of the magnetic field, which generates a new magnetization and so on.
In this case, field H0 in the plane z = 0 (Fig. 1) changes by no greater than 1% only in an area of about 25 × 40 mm2 and changes with a gradient of 0.7–1.5 Oe/mm outside such an area (see curves 3 in Figs. 2 and 3).
In this case, field H0 in the plane z = 0 changes by no greater than 1% in an area of about 82 × 84 mm2.
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This work was supported by the State Contract no. 0030-2019-0014 and was supported in part by the Russian Foundation for Basic Research (project no. 20-07-00356).
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Translated by A. Chikishev
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Gerus, S.V., Lock, E.H. & Annenkov, A.Y. Effect of Nonuniform Magnetic Field That Magnetizes a Ferrite Film on the Measurement Accuracy for Characteristics of Spin Waves. J. Commun. Technol. Electron. 66, 1378–1384 (2021). https://doi.org/10.1134/S1064226921120081
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DOI: https://doi.org/10.1134/S1064226921120081