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Analysis of Multilayer Heteroepitaxial Structures Based on CdHgTe Using Infrared Transmission Spectra

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Abstract

In this paper, we studied the transmission spectra of multilayer heteroepitaxial structures based on ternary cadmium-mercury-tellurium (CMT) solid solutions. A model for calculating the characteristics of epitaxial layers that compose a complex multilayer heteroepitaxial structure via experimental transmission spectrum was implemented. A packet gradient descent method is realized to calculate the parameters of the layers. We calculated the parameters of heteroepitaxial structures grown via liquid phase and molecular beam epitaxy: a thickness of operating photosensitive layers with an error of no more than 0.1 μm and a CMT composition with an error of no more than 1% were determined. The developed models show the efficacy in express control of the optical characteristics of semiconductor structures.

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Authors and Affiliations

  1. Orion R&P Association, 111538, Moscow, Russia

    A. V. Nikonov & N. I. Yakovleva

  2. Moscow Institute of Physics and Technology (State University), 141700, Dolgoprudnyi, Russia

    A. V. Nikonov

Authors
  1. A. V. Nikonov
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  2. N. I. Yakovleva
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Correspondence to N. I. Yakovleva.

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Translated by A. Ivanov

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Nikonov, A.V., Yakovleva, N.I. Analysis of Multilayer Heteroepitaxial Structures Based on CdHgTe Using Infrared Transmission Spectra. J. Commun. Technol. Electron. 64, 314–318 (2019). https://doi.org/10.1134/S1064226919030148

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  • DOI: https://doi.org/10.1134/S1064226919030148

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