Skip to main content
SpringerLink
Log in

Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

  • Published:
Journal of Communications Technology and Electronics Aims and scope Submit manuscript

Abstract

I–V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of epitaxial structures with the In0.67Ga0.33As absorbing layer doped with Zn on the InP substrates are studied. The photodiodes are fabricated using the mesatechnology. The long-wavelength boundary of the spectral photosensitivity of diodes measured at half-maximum is 2.06 μm at room temperature. Photosensitivity spectra are studied in a temperature interval of 230–300 K.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.

Similar content being viewed by others

REFERENCES

  1. I. D. Burlakov, L. Ya. Grinchenko, A. I. Dirochka, and N. B. Zaletaev, Usp. Prikl. Fiz. 2, 131 (2014).

    Google Scholar 

  2. A. I. Dirochka and L. N. Kurbatov, Photoelectronics. Basic Lectures on Electronics, Vol. 2: Solid-State Electronics (Tekhnosfera, Moscow, 2009).

  3. Per G. Gloersen, J. Vac. Sci. Technol. 12, 28 (1975).

    Article  Google Scholar 

  4. J. K. Kim, M. J. Cich, G. A. Keeler, et al., Appl. Phys. Lett. 95, 031112 (2009).

    Article  Google Scholar 

  5. Adachi Sadao, Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductors (Wiley, 2009).

    Google Scholar 

  6. G. F. Ivanovskii and V. I. Petrov, Ion-Plasma Processing of Materials (Radio i svyaz', Moscow, 1986).

  7. M. V. Sednev, I. D. Burlakov, and K.O. Boltar’, “Method for assembling of a photodetector,” RF Patent No. 2308787, Byull. Izobret., No. 29 (20.10.2007).

  8. M. V. Sednev, E. N. Zubkova, Yu. P. Sharonov, Usp. Prikl. Fiz. 1, 350 (2013).

  9. K. O. Boltar’, M. V. Sedenev, Yu. P. Sharonov, et al., “Method for fabrication of a multielement photodetector based on the InGaAs/InP epitaxial structures,” RF Patent No. 2530458, Byull. Izobret, No. 28 (10.10.2007).

  10. K. V. Shalimova, Semiconductor Physics (Energiya, Moscow, 1976).

  11. D. Sheela, Nandita Das Gupta, Semicond. Sci. & Technol. 23, 035018 (2008).

    Article  Google Scholar 

  12. M. V. Sednev, K. O. Boltar’, N. A. Irodov, and S. S. Demidov, Prikl. Fiz., No. 3, 73 (2015).

Download references

Author information

Authors and Affiliations

  1. Orion R&P Association, 111538, Moscow, Russia

    K. O. Boltar, N. A. Irodov, M. V. Sednev & M. A. Ladugin

  2. Moscow Institute of Physics and Technology (State University), 141700, Dolgoprudnyi, Moscow oblast, Russia

    K. O. Boltar

  3. Stel’makh Research Institute “Polyus”, 117342, Moscow, Russia

    A. A. Marmalyuk & Yu. L. Ryaboshtan

Authors
  1. K. O. Boltar
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. A. Irodov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. V. Sednev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. A. Marmalyuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. A. Ladugin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yu. L. Ryaboshtan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to K. O. Boltar or A. A. Marmalyuk.

Additional information

Translated by A. Chikishev

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Boltar, K.O., Irodov, N.A., Sednev, M.V. et al. Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm. J. Commun. Technol. Electron. 64, 283–285 (2019). https://doi.org/10.1134/S1064226919030021

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1064226919030021

Keywords:

Search

Navigation