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Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

A comparative analysis of the correlators of steady-state thermal and photoinduced stochastic fields (SFs) of concentrations and currents of mobile charge carriers in IR photodiodes and homogeneous semiconductors is presented. It is demonstrated that the correlators of thermal and photoinduced SFs of concentrations of mobile charge carriers are determined using conceptually identical expressions for any structure of the p–n junction and arbitrary polarity of applied voltage whereas the correlators of the SFs of photoinduced and dark currents are determined using conceptually identical expressions only for the reverse-biased p–n junction with a relatively wide base.

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Authors and Affiliations

  1. Branch of Ural–Geofizika, ul. Plekhanova 4, str. 1, Moscow, 111123, Russia

    A. Yu. Selyakov

  2. OAO NPO Orion, Kosinskaya ul. 9, Moscow, 111123, Russia

    I. D. Burlakov & A. M. Filachev

Authors
  1. A. Yu. Selyakov
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  2. I. D. Burlakov
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  3. A. M. Filachev
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Corresponding author

Correspondence to A. Yu. Selyakov.

Additional information

Original Russian Text © A.Yu. Selyakov, I.D. Burlakov, A.M. Filachev, 2015, published in Prikladnaya Fizika, 2015, No. 4, pp. 59–65.

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Selyakov, A.Y., Burlakov, I.D. & Filachev, A.M. Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes. J. Commun. Technol. Electron. 61, 352–357 (2016). https://doi.org/10.1134/S1064226916030165

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  • DOI: https://doi.org/10.1134/S1064226916030165

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