Abstract
Relationships, which determine requirements for the resistance of the inversion layer for decreasing the influence of the guard ring on the dark current and photodiode noisess and allow obtaining the specified intercoupling coefficient between photosensitive elements in multielement photodiodes, are given. It is shown that dependences of the current of the guard ring on the bias voltage and the charge on the Si–SiO2 interface in the presence of the inversion layer satisfy the current generation model in the space-charge region of the current. The resistance of the inversion layer increase with an increase in the bias voltage in accordance with the relationship R u ∼ V 1.5.
Similar content being viewed by others
References
A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Solid-State Photoelectronics. Photodiodes (Fizmatkniga, Moscow, 2011) [in Russian].
P. Wendland, Electro-Opt. Syst. Design, No. 8, 67 (1970).
N. F. Kovtonyuk, Electronic Components on the Basis of Semiconductor–Dielectric Structures (Energiya, Moscow, 1976) [in Russian].
V. P. Astakhov, D. A. Gindin, V. V. Karpov, et al., Prikl. Fiz., No. 2, 79 (1999).
E. A. Klimanov, A. V. Kulymanov, V. P. Liseikin, et al., Radiotekh. Elektron. (Moscow) 21, 1967 (1976).
J. C. Inkson, Solid-State Electron. 13, 1167 (1970).
V. P. Astakhov, I. A. Bolesov, D. A. Gindin, et al., Prikl. Fiz., No. 1, 48 (2002).
A. S. Grove and D. J. Fitzgerald, Solid-State Electron. 9, 783 (1966).
R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits (Wiley, New York, 1986; Mir, Moscow, 1989).
H. Stats, G. A. deMass, L. Davis et al., Phys. Rev. 101, 1272 (1956).
K. Remashan, N. A. Wong, K. Chan, et al., Solid-State Electron. 46, 153 (2002).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.S. Demidov, E.A. Klimanov, 2014, published in Prikladnaya Fizika, 2014, No. 4, pp. 68–72.
Rights and permissions
About this article
Cite this article
Demidov, S.S., Klimanov, E.A. Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes. J. Commun. Technol. Electron. 61, 328–332 (2016). https://doi.org/10.1134/S1064226916030074
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1064226916030074