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A Study of Quantum Dots in a Multigrain Layer of a Planar-End Microstructure

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Abstract

Quantum dots (QDs) of CdSe, PbS, and InSb semiconductors in a multigrain layer of a planar-end microstructure have been studied. A model of an ordered QDs arrangement in a micron gap of the structure and a current flow along the lines of their series-parallel arrangement are considered. At low voltages (less than 8 V), electron transport is determined by thermal and tunnel emission from QDs into the gap, while at high voltages it is determined by charge restriction in QDs according to the model of Coulomb blockade. A strong effect of radiation with IR and UV spectra on the current–voltage characteristics has been found.

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ACKNOWLEDGMENTS

The authors are thankful to Prof. A.G. Rokakh for useful discussion and recommendations.

Funding

This research was supported by the Russian Foundation for Basic Research (project no. 19-07-00595-a; research on the properties of QDs) and Assistance Fund (project no. 6823/С3-48354, START program; planar-end structure).

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Authors and Affiliations

  1. LLC Volga Research and Production Enterprise, 410033, Saratov, Russia

    N. D. Zhukov, I. T. Yagudin, N. P. Aban’shin & D. S. Mosiyash

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  1. N. D. Zhukov
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  2. I. T. Yagudin
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  3. N. P. Aban’shin
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  4. D. S. Mosiyash
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Correspondence to N. D. Zhukov.

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Translated by G. Dedkov

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Zhukov, N.D., Yagudin, I.T., Aban’shin, N.P. et al. A Study of Quantum Dots in a Multigrain Layer of a Planar-End Microstructure. Tech. Phys. Lett. 46, 1088–1091 (2020). https://doi.org/10.1134/S1063785020110152

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