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Photoresponse of Optical Sensors Based on Transition Metal Dichalcogenides: Influence of Thickness on Spectral Characteristics

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Abstract

Prototype field-effect transistors based on solid solutions of transition metal dichalcogenides (TMDs) have been manufactured, and their spectral characteristics were studied using the photocurrent spectroscopy technique. Results of theoretical estimation of the total optical absorbance of two-dimensional (2D) TMD-based semiconductors of various thicknesses are presented as dependent on the light wavelength with allowance for the multiray interference. It is established that the interference effect significantly contributes to the resulting shapes of spectral characteristics of these optical sensors with variable thickness of TMD-based photosensitive layers.

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Funding

This work was supported in part by the Russian Foundation for Basic Research (projects nos. 18-32-00831 and 18-32-20047) and the Ministry of Education and Science of the Russian Federation (state order no. 3.7335.2017/9.10). Investigations were performed using instrumentation of the Center of Collective Equipment Use of the Moscow Institute of Radio Engineering, Electronics, and Automation, Russian Technological University.

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Authors and Affiliations

  1. Moscow Institute of Radio Engineering, Electronics, and Automation, Russian Technological University, 119454, Moscow, Russia

    A. Yu. Avdizhiyan, S. D. Lavrov, A. V. Kudryavtsev, A. P. Shestakova & M. V. Vasina

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  1. A. Yu. Avdizhiyan
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  2. S. D. Lavrov
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  3. A. V. Kudryavtsev
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  4. A. P. Shestakova
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  5. M. V. Vasina
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Correspondence to A. Yu. Avdizhiyan.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Avdizhiyan, A.Y., Lavrov, S.D., Kudryavtsev, A.V. et al. Photoresponse of Optical Sensors Based on Transition Metal Dichalcogenides: Influence of Thickness on Spectral Characteristics. Tech. Phys. Lett. 45, 625–627 (2019). https://doi.org/10.1134/S106378501906018X

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  • DOI: https://doi.org/10.1134/S106378501906018X

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