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Numerical Simulation of the Current Dependence of Emission Spectra of High-Power Pulsed Lasers Based on Separate-Confinement Double Heterostructures

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Abstract

A new physical model is proposed for describing the observed current dependence of the emission spectra of high-power pulse lasers based on double separate-confinement heterostructures. The model takes into account the presence of isotype n–n heterojunctions at the interface between the waveguide and the active region. A numerical simulation of the lasing processes was performed. The resulting analytical current dependence of the 2D concentration of holes in the quantum well made it possible to evaluate for the first time the current dependence of the short-wavelength limit of the lasing spectrum. A good agreement was reached between the calculated and experimental characteristics.

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References

  1. S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov, Semiconductors 38, 1430 (2004).

    Article  ADS  Google Scholar 

  2. S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, K. S. Borschev, D. A. Vinokurov, and I. S. Tarasov, Semiconductors 40, 990 (2006).

    Article  ADS  Google Scholar 

  3. L. E. Vorob’ev, V. L. Zerova, K. S. Borshchev, Z. N. Sokolova, I. S. Tarasov, and G. Belenky, Semiconductors 42, 737 (2008).

    Article  ADS  Google Scholar 

  4. D. A. Veselov, I. S. Shashkin, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Tech. Phys. Lett. 41, 263 (2015).

    Article  ADS  Google Scholar 

  5. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), Vol. 1, rus. p. 135.

    Google Scholar 

  6. Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, and L. V. Asryan, Semiconductors 50, 667 (2016).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. V. Rozhkov & N. A. Pikhtin

Authors
  1. A. V. Rozhkov
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  2. N. A. Pikhtin
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Correspondence to A. V. Rozhkov.

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Original Russian Text © A.V. Rozhkov, N.A. Pikhtin, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 11, pp. 46–52.

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Rozhkov, A.V., Pikhtin, N.A. Numerical Simulation of the Current Dependence of Emission Spectra of High-Power Pulsed Lasers Based on Separate-Confinement Double Heterostructures. Tech. Phys. Lett. 44, 476–478 (2018). https://doi.org/10.1134/S1063785018060081

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  • DOI: https://doi.org/10.1134/S1063785018060081

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